Related papers: Voltage Control of Perpendicular Exchange Bias in …
Electrical gate-manipulated exchange bias (EB) effect is a long-term goal for spintronics applications. Meanwhile, the emergence of van der Waals (vdW) magnetic heterostructures provides ideal platforms for the study of interlayer magnetic…
Exchange bias (EB) is a cornerstone of modern magnetic memory and sensing technologies. Its extension to the realm of two-dimensional (2D) van der Waals (vdW) magnets holds promise for revolutionary advancements in miniaturized and…
Magnetic straintronics, the strain-mediated control of magnetic anisotropy, has emerged as a key direction for next-generation energy-efficient technologies. In multiferroic heterostructures, magnetoelectric coupling is typically achieved…
We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in…
The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables…
Exchange bias (EB) refers to a shift of the hysteresis loop along the field axis in materials consisting of ferromagnetic (FM) and antiferromagnetic (AFM) layers, generally after a cooling procedure in high magnetic field. This effect is…
Electron-mediated voltage control of exchange coupling (EM-VCEC) has been proposed as a mechanism for magnetization switching via modulation of spin-dependent electron reflection. However, its experimental verification has been challenging…
Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. In spite of the electrical modulation of insulated AFMs through coupling between their intrinsic…
Exchange bias is a horizontal shift of the hysteresis loop observed for a ferromagnetic layer in contact with an antiferromagnetic layer. Since exchange bias is related to the spin structure of the antiferromagnet, for its fundamental…
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial…
Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a…
The exchange bias (EB) effect, arising from interfacial coupling between ferromagnetic (FM) and antiferromagnetic (AF) layers, induces a unidirectional magnetic anisotropy and underpins a wide range of spintronic functionalities. Extending…
The control of magnetic properties by means of an electric field is an important aspect in magnetism and magnetoelectronics. We here utilize magnetoelastic coupling in ferromagnetic/piezoelectric hybrids to realize a voltage control of…
Dynamic modulation of electromagnetic responses is theoretically examined in dielectric antiferromagnets. While both magneto-electric and magneto-elastic coupling can achieve robust electrical control of magnetic anisotropy, the latter is…
We report the exchange bias (EB) effect along with tunneling magnetoresistance (MR) in polycrystalline La_{0.88}Sr_{0.12}CoO_3. Analogous to the shift in the magnetic hysteresis loop along the field (H)-axis a shift is clearly observed in…
The exploration of exchange bias (EB) on the nanoscale provides a novel approach to improving the anisotropic properties of magnetic nanoparticles for prospective applications in nanospintronics and nanomedicine. However, the physical…
By means of micromagnetic spin dynamics calculations, a quantitative calculation is carried out to explore the mechanism of exchange bias (EB) in ferromagnetic (FM)/compensated antiferromagnetic (AFM) bilayers. The antiferromagnets with low…