Related papers: Voltage Control of Perpendicular Exchange Bias in …
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in…
Efficient manipulation of spin waves (SWs) is considered as one of the promising means for encoding information with low power consumption in next generation spintronic devices. The SW Doppler shift is one important phenomenon by…
Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…
While the electrical current manipulation of antiferromagnets (AFMs) has been demonstrated, the extent of the studied AFM materials has been limited with few systematic experiments and a poor understanding. We compare the electrical current…
Precise and ultrafast control of electronic band structures is a central challenge for advancing quantum functional materials and devices. Conventional approaches--such as chemical doping, lattice strain, or external gating--offer robust…
By submonolayer insertion of Au, Pt, or Pd into Ta / CoFeB / MgO / Ta heterostructures we tune the perpendicular magnetic anisotropy and the coercive field of the ferromagnetic layer. We demonstrate that this has a major influence on the…
Altermagnets with nonrelativistic momentum-dependent spin splitting and compensated net magnetic moments have recently garnered significant interest in spintronics, particularly as pinning layers in magnetic tunnel junctions (MTJs).…
The mechanism of spontaneous exchange bias (SEB) and the dominant factor of its blocking temperature are still unclear in Heusler alloys. Here, the related investigations are performed in Mn2Ni1.5Al0.5 Heusler alloys with SEB. The results…
Voltage control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semiconducting systems can be controlled so far. In metallic…
The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in…
Epitaxial strain provides a powerful, non-chemical route to tune the properties of functional materials by manipulating the coupling between spin, charge, and lattice degrees of freedom. Using density functional theory (DFT) calculations…
Due to the lack of a net magnetization both at the interface and in the bulk, antiferromagnets with compensated interfaces may appear incapable of influencing the phase transition in an adjacent superconductor via the spin degree of…
Effective modulation of magnetic permeability plays a vital role in the development of high-performance inductors. Here, phase-field simulations of hard/soft ferrite composites (BaM/NiZn) clarify how exchange coupling and microstructure…
A new characteristic is observed in the training effect of perpendicular exchange bias. For Pt/Co/Pt/IrMn multilayers with perpendicular magnetic anisotropy, the magnetization reversal process is accompanied by pinned domain wall motion and…
We report an unusual, non-monotonous dependence of the exchange bias on the thickness of the ferromagnetic layer in a ferromagnet/antiferromagnet bilayer system. We show that in epitaxial CoO/Fe(110) bilayers, the evolution of the Fe…
The dependence of thermally induced spontaneous magnetization reversal on time-dependent cooling protocols was studied. Slower cooling and longer waiting close to the N\`{e}el temperature of the antiferromagnet ($T_N$) enhances the…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
The interplay between magneto-electricity (ME) and magneto-elasticity (MEL) is studied in the context of voltage-controlled magnetic anisotropy (VCMA). Strain plays more than a role of changing lattice constant but that of the internal…
Recent advances in tuning the correlated behavior of graphene and transition-metal dichalcogenides (TMDs) have opened a new frontier in the study of many-body physics in two dimensions and promise exciting possibilities for new quantum…
We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cross-linked polymer electrolyte system of improved efficiency, we induce surface charge densities as high as $\approx 2.8 \times…