Related papers: Voltage Control of Perpendicular Exchange Bias in …
Magnetoelectric coupling is vital for exploring fundamental science and driving the development of high-density memory and energy-efficient spintronic devices. Altermagnets, which merge the benefits of ferromagnets and antiferromagnets,…
Exchange bias (EB) phenomena have been observed in Nd2/3Ca1/3MnO3 colossal magnetoresistance perovskite below the Curie temperature $T_{C}$ = 70 K and attributed to an antiferromagnetic (AFM) - ferromagnetic (FM) spontaneous phase…
Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and…
We present a study of the control of electric field induced strain on the magnetic and electrical transport properties in a magneto-elastically coupled artificial multiferroic Fe3O4/BaTiO3 heterostructure. In this Fe3O4/BaTiO3…
Antiferromagnetic spintronic devices have the potential to outperform conventional ferromagnetic devices due to their ultrafast dynamics and high data density. A challenge in designing these devices is the control and detection of the…
The exchange bias (EB) effect has been observed in magnetic Bi$_{0.9}$Gd$_{0.1}$Fe$_{0.9}$Ti$_{0.1}$O$_3$ nanoparticles. The influence of magnetic field cooling on the exchange bias effect has also been investigated. The magnitude of the…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric…
The materials exhibiting exchange bias (EB) have been extensively investigated mainly due to their great technological applications in magnetic sensors, but its underlying mechanism remains elusive. Here we report the novel coexistence of…
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room…
The exchange bias at ferromagnetic/antiferromagnetic interfaces strongly depends upon the state of antiferromagnetic (AF) layer which, due to strong magnetoelastic coupling, is sensitive to mechanical stresses. In the present paper we…
Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy (PMA). Atom probe tomography (APT), scanning transmission electron microscopy…
We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a…
Electric field-induced magnetization switching in multiferroics is intriguing for both fundamental studies and potential technological applications. Here, we review the recent developments on electric field-induced magnetization switching…
Herein, we report the appearance of a large exchange bias (EB) effect in a moderate cooling field (cooling field, H$_{FC}$ = 1 kOe) for the 314-Sr3YCo4O10.5 material. The exchange bias has started to appear near room temperature and reaches…
Exchange anisotropy in ferromagnet/antiferromagnet (FM/AF) films is usually introduced along the cooling field or FM magnetization direction. Here we investigate the dependence of the exchange anisotropy, loop bifurcation, and reversal…
We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe81Ga19 film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the…
Modern magnetic thin film devices owe their success in large part to effects emerging from interlayer coupling and exchange interaction at interfaces. A prominent example is exchange bias (EB), a magnetic coupling phenomenon found in…
Exchange bias effect plays a crucial role in modern magnetic memory technology. Recently, van der Waals magnetic materials have emerged and shown potential in spintronic devices at atomic scale. Owing to their tunable physical properties…
The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory devices. Therefore, an independent switching of the two…