Related papers: Engineering Thermal and Electrical Interface Prope…

Adding thermal conductivity enhancements to increase thermal power in solid-liquid phase-change thermal energy storage modules compromises volumetric energy density and often times reduces the mass and volume of active phase change material…

With the imminent slowing down of DRAM scaling, Phase Change Memory (PCM) is emerging as a lead alternative for main memory technology. While PCM achieves low energy due to various technology-specific advantages, PCM is significantly slower…

The development of thermal energy storage materials is the most attractive strategy to harvest the solar energy and increase the energy utilization efficiency. Phase change materials (PCMs) have received much attention in this research…

Polyurethane (PU) is an ideal thermal insulation material due to its excellent thermal properties. The incorporation of Phase Change Materials (PCMs) capsules into Polyurethane (PU) has been shown to be effective in building envelopes. This…

The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased…

Thermal Energy Storage (TES) using Phase Change Materials (PCMs) represents a critical technology for sustainable energy management and grid stability. This study presents a novel Physics-Driven Deep Learning (PDDL) framework for modeling…

Progress in integrated nanophotonics has enabled large-scale programmable photonic integrated circuits (PICs) for general-purpose electronic-photonic systems on a chip. Relying on the weak, volatile thermo-optic or electro-optic effects,…

Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue…

An overview on recent developments in thermal interfaces is given with a focus on a novel thermal interface technology that allows the formation of 2-3 times thinner bondlines with strongly improved thermal properties at lower assembly…

The rapid development of multi-core system and increase of data-intensive application in recent years call for larger main memory. Traditional DRAM memory can increase its capacity by reducing the feature size of storage cell. Now further…

With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for…

Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests, but also make PCMs based random access memory (PRAM) a leading candidate for…

Phase change memories (PCM) is an emerging type of non-volatile memory that has shown a strong presence in the data-storage market. This technology has recently attracted significant research interest in the development of non-Von Neumann…

A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory computing. Non-volatile memory offers a potential solution…

Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…

Recent studies showed that the in-plane and inter-plane thermal conductivities of two-dimensional (2D) MoS2 are low, posing a significant challenge in heat management in MoS2-based electronic devices. To address this challenge, we design…

Programmable photonic integrated circuits (PICs) are the foundation of on-chip optical technologies with the optical modulators being one of the main building blocks of such programmable PICs. However, most of the available modulators…

Mobile electrons in the semiconductor monolayer-MoS$_2$ form a ferromagnetic state at low temperature. The Fermi sea consists of two circles, one at the $K$-point, the other at the $\tilde{K}$-point, both with the same spin. Here, we…

We performed a computational analysis on percolation transport and filament formation in amorphous $Ge_2Sb_2Te_5$ (a-GST) using 2D finite-element multi-physics simulations with 2 nm out-of-plane depth using an electric-field and temperature…

Compute-in-memory (CIM) presents an attractive approach for energy-efficient computing in data-intensive applications. However, the development of suitable memory designs to achieve high-performance CIM remains a challenging task. Here, we…