Related papers: Engineering Thermal and Electrical Interface Prope…
We propose a novel hybrid mode interferometer (HMI) leveraging the interference of hybridized TE-TM modes in a silicon-on-insulator (SOI) waveguide integrated with a GeSe phase change material (PCM) layer. The SOI waveguide's dimensions are…
Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scaling of 2D semiconductors, such as MoS2, is limited by the…
Phase changing materials (PCM) are widely used for optical data recording, sensing, all-optical switching, and optical limiting. Our focus here is on the case when the change in the transmission characteristics of the optical material is…
In-memory computing (IMC) is an emerging non-von Neumann paradigm that leverages the intrinsic physics of memory devices to perform computations directly within the memory array. Among the various candidates, phase-change memory (PCM) has…
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…
Understanding the thermal properties of two-dimensional (2D) materials and devices is essential for thermal management of 2D applications. Here we perform molecular dynamics simulations to evaluate both the specific heat of $MoS_{2}$ as…
Programmable and reconfigurable optics hold significant potential for transforming a broad spectrum of applications, spanning space explorations to biomedical imaging, gas sensing, and optical cloaking. The ability to adjust the optical…
Electrically tunable optical devices present diverse functionalities for manipulating electromagnetic waves by leveraging elements capable of reversibly switching between different optical states. This adaptability in adjusting their…
It is widely agreed that phase change materials (PCMs) are of high interest for sustainable energy future. Many of the applications require anti-leakage properties of PCM, that can be accomplished through PCM encapsulation. In this study,…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
We leverage 3D numerical simulations to study phase change materials (PCMs) cells under the effect of buoyancy forces. The solid PCM is heated from a source boundary, triggering melting. The source features multiple solid fins that protrude…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next generation electronic and electro-optical devices. Here we have…
We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of polycrystalline MoS2 films with grain sizes…
Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends…
Computing-in-memory (CIM) has attracted significant attentions in recent years due to its massive parallelism and low power consumption. However, current CIM designs suffer from large area overhead of small CIM macros and bad programmablity…
Chalcogenide phase change materials (PCMs) have been extensively applied in data storage, and they are now being proposed for high resolution displays, holographic displays, reprogrammable photonics, and all-optical neural networks. These…
Phase-change material (PCM)-based non-volatile multilevel phase shifters are key components in photonic integrated circuits. Electrically, multiple phase levels can be encoded by controlling the heater power and employing different…
The present work refers to a simulation study on nanoconfined polymers in polymer-MoS 2 nanocomposites as a function of MoS 2 -MoS 2 interlayer separation. We indeed apply reverse nonequlibrium molecular dynamics simulations (RNEMD) to…
High-performance programmable silicon photonic circuits are considered to be a critical part of next generation architectures for optical processing, photonic quantum circuits and neural networks. Low-loss optical phase change materials…