Exchange energy of the ferromagnetic electronic ground-state in a monolayer semiconductor
Abstract
Mobile electrons in the semiconductor monolayer-MoS form a ferromagnetic state at low temperature. The Fermi sea consists of two circles, one at the -point, the other at the -point, both with the same spin. Here, we present an optical experiment on gated MoS at low electron-density in which excitons are injected with known spin and valley quantum numbers. The resulting trions are identified using a model which accounts for the injection process, the formation of antisymmetrized trion states, electron-hole scattering from one valley to the other, and recombination. The results are consistent with a complete spin polarization. From the splittings between different trion states, we measure the exchange energy, , the energy required to flip a single spin within the ferromagnetic state, as well as the intervalley Coulomb exchange energy, . We determine meV and meV at cm, and find that depends strongly on the electron density, .
Keywords
Cite
@article{arxiv.2311.02164,
title = {Exchange energy of the ferromagnetic electronic ground-state in a monolayer semiconductor},
author = {Nadine Leisgang and Dmitry Miserev and Hinrich Mattiat and Lukas Schneider and Lukas Sponfeldner and Kenji Watanabe and Takashi Taniguchi and Martino Poggio and Richard J. Warburton},
journal= {arXiv preprint arXiv:2311.02164},
year = {2023}
}
Comments
13 pages, 11 figures