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Memristors are low-power memory-holding resistors thought to be useful for neuromophic computing, which can compute via spike-interactions mediated through the device's short-term memory. Using interacting spikes, it is possible to build an…

Nanomechanical computers promise a greatly improved energetic efficiency compared to their electrical counterparts. However, progress towards this goal is hindered by a lack of modular components, such as logic gates or transistors, and…

Using a block of three separated solid elements, a thermal source and drain together with a gate made of an insulator-metal transition material exchanging near-field thermal radiation, we introduce a nanoscale analog of a field-effect…

Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W)…

We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…

Reversible logic has received great attention in the recent years due to their ability to reduce the power dissipation which is the main requirement in low power digital design. It has wide applications advanced computing, low power CMOS…

We examine spin dependent transport in a quantum interferometer composed of magnetic atomic sites based on transfer matrix formalism. The interferometer, threaded by a magnetic flux $\phi$, is symmetrically attached to two semi-infinite…

Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM). In conventional materials, it typically arises from the…

Using micromagnetic simulation, we show that in-plane uniaxial magnetic anisotropy (IPUA) can be used to obtain FAN-OUT, AND and OR gates in an array of coupled disks with magnetic vortex configuration. First, we studied the influence of…

Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables…

We introduce a novel logic style with self-checking capability to enhance hardware reliability at logic level. The proposed logic cells have two-rail inputs/outputs, and the functionality for each rail of outputs enables construction of…

In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…

Optical logic has the potential to replace electronics with photonic circuits in applications for which optic-to-electronic conversion is impractical and for integrated all-optical circuits. Nonlinear optics in whispering gallery mode…

In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…

Implication logic gates that are based on volatile memristors are demonstrated experimentally with the use of relay-based volatile memristor emulators of an original design. The fabricated logic circuit involves two volatile memristors and…

Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same…

This paper presents a ternary half adder and a 1-trit multiplier using carbon nanotube transistors. The proposed circuits are designed using pass transistor logic and dynamic logic. Ternary logic uses less connections than binary logic, and…

The notion of a spin field effect transistor, where transistor action is realized by manipulating the spin degree of freedom of charge carriers instead of the charge degree of freedom, has captivated researchers for at least three decades.…

The concept of a magnetic bipolar transistor (MBT) is introduced. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin…

Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin…