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We show that reversible two- and three-input logic gates, among which we mention the universal Toffoli gate, can be implemented with three tilted gating electrodes patterned on a monolayer graphene flake. These low-dissipation gates are…
Nanomagnetic logic has emerged as a potential replacement for traditional CMOS-based logic because of superior energy-efficiency. One implementation of nanomagnetic logic employs shape-anisotropic (e.g. elliptical) ferromagnets (with two…
Logical devices based on electrical currents are ubiquitous in modern society. However, digital logic does have some drawbacks such as a relatively high power consumption. It is therefore of great interest to seek alternative means to build…
This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates based on a hybrid graphene/ferromagnet…
Surface-plasmon-polariton waves propagating at the interface between a metal and a dielectric, hold the key to future high-bandwidth, dense on-chip integrated logic circuits overcoming the diffraction limitation of photonics. While recent…
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…
Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…
Neuromorphic Computing (NC), which emulates neural activities of the human brain, is considered for low-power implementation of artificial intelligence. Towards realizing NC, fabrication, and investigations of hardware elements such as…
Over the last decade, memristive devices have been widely adopted in computing for various conventional and unconventional applications. While the integration density, memory property, and nonlinear characteristics have many benefits,…
A magnetic nanoparticle in a vortex state is a promising candidate for the information storage. One bit of information corresponds to the upward or downward magnetization of the vortex core (vortex polarity). Generic properties of the…
Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature with a laser scribing process. The neuron transistors are composed of a bottom ITO floating gate and multiples of two…
Non-volatile flip-flops (NVFFs) using power gating techniques promise to overcome the soaring leakage power consumption issue with the scaling of CMOS technology. Magnetic tunnel junction (MTJ) is a good candidate for constructing the NVFF…
The design of balanced ternary digital logic circuits based on memristors and conventional CMOS devices is proposed. First, balanced ternary minimum gate TMIN, maximum gate TMAX and ternary inverters are systematically designed and verified…
Nanomagnets with biaxial magnetocrystalline anisotropy have four stable magnetization orientations that can encode 4-state logic bits (00), (01), (11) and (10). Recently, a 4-state NOR gate derived from three such nanomagnets, interacting…
Superconducting electronics are among the most promising alternatives to conventional CMOS technology thanks to the ultra-fast speed and ultra-high energy efficiency of the superconducting devices. Having a cryogenic control processor is…
Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused…
Spintronic devices that utilize the spin degree of freedom of a charge carrier to store, process or transmit information, may be better performers than their traditional electronic counterparts if special properties of "spin" are exploited…
A new Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET) is proposed and verified by two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep diffused p+-regions as the gate, the proposed device uses…
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…
As the conventional scaling of logic devices comes to an end, functional wafer backside and 3D transistor stacking are consensus for next-generation logic technology, offering considerable design space extension for powers, signals or even…