Related papers: Characterization of the first prototype CMOS pixel…
We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which…
The first evaluation of an ultra-high granularity digital electromagnetic calorimeter prototype using 1.0-5.8 GeV/c electrons is presented. The $25\times10^6$ pixel detector consists of 24 layers of ALPIDE CMOS MAPS sensors, with a pitch of…
This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation.…
With the next upgrade of the ALICE inner tracking system (ITS3) as its primary focus, a set of small MAPS test structures have been developed in the 65 nm TPSCo CMOS process. The CE-65 focuses on the characterisation of the analogue charge…
A large fraction of the results produced by the LHC experiments during the first run were made possible by precision vertexing detectors. The all-silicon tracking detector of the CMS experiment uses a pixel detector to do vertexing. This…
The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration…
For the purpose of withstanding very high radiation doses, silicon pixel sensors with a 3D electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High…
3D silicon detectors, in which the electrodes penetrate the sensor bulk perpendicular to the surface, have recently undergone a rapid development from R\&D over industrialisation to their first installation in a real high-energy-physics…
The M\"ONCH hybrid pixel detector, with a 25 \textmu m pixel pitch and fast charge-integrating readout, has demonstrated subpixel resolution capabilities for X-ray imaging and deep learning-based electron localization in electron…
Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$\Omega$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation.…
The next generation of MAPS for future tracking detectors will have to meet stringent requirements placed on them. One such detector is the ALICE ITS3 that aims to be very light at 0.07% X/X$_{0}$ per layer and have a low power consumption…
A hybrid pixel detector based on the concept of simultaneous charge integration and photon counting will be presented. The second generation of a counting and integrating X-ray prototype CMOS chip (CIX) has been operated with different…
Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their…
We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a…
A next-generation medium-energy gamma-ray telescope targeting the MeV range would address open questions in astrophysics regarding how extreme conditions accelerate cosmic-ray particles, produce relativistic jet outflows, and more. One…
Semiconductor pixel detectors offer features for the detection of radiation which are interesting for particle physics detectors as well as for imaging e.g. in biomedical applications (radiography, autoradiography, protein crystallography)…
The Skipper-in-CMOS image sensor integrates the non-destructive readout capability of Skipper Charge Coupled Devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode in a CMOS imaging process, while taking advantage of…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…
The present Compact Muon Solenoid silicon pixel tracking system has been designed for a peak luminosity of 1034cm-2s-1 and total dose corresponding to two years of the Large Hadron Collider (LHC) operation. With the steady increase of the…
At least 25 kinds of detector-like devices need to be integrated in Phase I of the High Energy Photon Source (HEPS), and the work needs to be carefully planned to maximise productivity with highly limited human resources. After a systematic…