Related papers: Characterization of the first prototype CMOS pixel…

Results obtained with 3D columnar pixel sensors bump-bonded to the RD53A prototype readout chip are reported. The interconnected modules have been tested in a hadron beam before and after irradiation to a fluence of about…

The CMS detector at the CERN LHC features a silicon pixel detector as its innermost subdetector. The original CMS pixel detector has been replaced with an upgraded pixel system (CMS Phase-1 pixel detector) in the extended year-end technical…

The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R\&D program, aiming at using 3D pixel…

In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low…

We present a conceptual design for a low-mass, all pixel vertex detector using the CMOS quadruple well INMAPS process, capable of working in the very high luminosities exceeding 10^36 /cm^2 /sec that can be expected at the next generation…

This paper describes an iterative method of per-pixel energy calibration of hybrid pixel detectors with GaAs:Cr sensor and Timepix readout chip. A convolution of precisely measured spectra of characteristic X-rays of different metals with…

The ALICE ITS3 project foresees the use of ultra-light MAPS, developed in the 65 nm imaging process, for the vertex detector in the ALICE experiment at the LHC to drastically improve the vertexing performance. This new development,…

Sensing electric fields with high sensitivity, high spatial resolution and at radio frequencies can be challenging to realize. Recently, point defects in silicon carbide have shown their ability to measure local electric fields by optical…

In a CMOS image sensor pixel, fast and complete charge transfer from pinned photodiode (PPD) is desired and necessary in some applications. In special cases such as time-of-flight imaging or large pinned photodiodes, the PPD potential well…

Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements…

This paper focuses on the conversion gain (CG) of pixels implementing pinned photo-diodes (PPD) and in-pixel voltage follower in standard CMOS image sensor (CIS) process. An overview of the CG expression and its impact on the noise…

DEPleted Field Effect Transistor (DEPFET) active pixel detectors combine a first amplification stage with a fully depleted sensor in one single device, resulting in a very good signal-to-noise ratio even for thin sensors. DEPFET pixels are…

The continuing improvement in quantum efficiency (above 90% for single visible photons), reduction in noise (below 1 electron per pixel), and shrink in pixel pitch (less than 1 micron) motivate billion-pixel X-ray cameras (BiPC-X) based on…

We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The Photodiode areas are respectiveley 1mm x 1mm and 0.4mm…

We summarize recent progress in ultrafast Complementary Metal Oxide Semiconductor (CMOS) image sensor development and the application of neural networks for post-processing of CMOS and charge-coupled device (CCD) image data to achieve…

This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of…

This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration…

LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the…

While designed primarily for X-ray imaging applications, the Medipix3 ASIC can also be used for charged-particle tracking. In this work, results from a beam test at the CERN SPS with irradiated and non-irradiated sensors are presented and…

This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\mu$m and a thin…