Related papers: Sidewall quantum wires on GaAs(001) substrates
A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is…
Indium gallium nitride (InGaN) quantum well (QW) micro- and nanoscale light-emitting diodes (LEDs) are promising for next-generation ultrafast optical interconnects and augmented/virtual reality displays. However, scaling to nanoscale…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped…
Modelocked lasers operating at 2-3 um wavelength region are interesting for various spectroscopic applications. To this end, GaSb-based semiconductor saturable absorber mirrors (SESAMs) are developing fast as a practical technology for…
Ag(111) films were deposited at room temperature onto H-passivated Si(111)-(1x1) substrates, and subsequently annealed at 300 C. An abrupt non-reactive Ag/Si interface is formed, and very uniform non-strained Ag(111) films of 6-12…
We investigate the transport properties of two strongly coupled ballistic one-dimensional (1D) wires, defined by a split-gate structure deposited on a GaAs/AlGaAs double quantum well. Matching the widths and electron densities of the two…
We describe the interaction of surface acoustic waves with electrons in an array of quantum wires, patterned out of a two dimensional electron gas. Two specific geometries are considered, in which the surface acoustic wave travels parallel,…
The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA-MBE) technique under various growth conditions. GaN NWs…
A system of an array of side-coupled quantum-dots attached to a quantum wire is studied theoretically. Transport through the quantum wire is investigated by means of a noninteracting Anderson tunneling Hamiltonian. Analytical expressions of…
Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs,…
Growth of GaMnAs by molecular beam epitaxy is typically performed at low substrate temperatures (250C) and high As overpressures leading to the incorporation of excess As and Mn interstitials, which quench optical signals such as…
We study the electronic transport through a quantum wire (QW) with a strong side coupled quantum dot (QD). We obtain a linear conductance with lateral peaks when the gate voltage, is located near the edge of the conduction band. The…
Al(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition…
Despite its potential in the fields of optoelectronics and topological insulators, experimental electronic band structure studies of Bi-doped GaAs are scarce. The reason is the complexity of growth which tends to leave bulk and in…
SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum wells are widely utilized. In these structures, band…
We have performed four-probe electrical transport measurements on solitary highly crystalline wires of semimetallic bismuth with aspect ratios up to 60 at room and at cryogenic temperatures. By proper choice of the substrate material and…
We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high…
Quantum well (QW) structures are widely used in lasers, semiconductor optical amplifiers, modulators, enabling their monolithic integration on the same substrate. As optoelectronic systems evolve to meet the growing bandwidth demands in the…
Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, i.e., the controlled transport of individual…