Related papers: Sidewall quantum wires on GaAs(001) substrates
An undoped double quantum well (DQW) was driven with a terahertz (THz) electric field of frequency \omega_{THz} polarized in the growth direction, while simultaneously illuminated with a near-infrared (NIR) laser at frequency \omega_{NIR}.…
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…
Surface acoustic waves (SAWs) coupled to quantum dots (QDs), trapped atoms and ions, and point defects have been proposed as quantum transduction platforms, yet the requisite coupling rates and cavity lifetimes have not been experimentally…
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…
The GaAs/AlGaAs materials system is well suited to multi-bandgap applications such as the multiple quantum well solar cell. GaAs quantum wells are inserted in the undoped AlGaAs active region of a pin structure to extend the absorption…
A theory of light transmission through a quantum well (QW) in a magnetic field perpendicular to the QW plane is developed. The light wave length is supposed comparable with the QW width. The formulas for reflection, absorption and…
Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…
Light trapping in sub-wavelength semiconductor nanowires (NWs) offers a promising approach to simultaneously reducing material consumption and enhancing photovoltaic performance. Nevertheless, the absorption efficiency of a NW, defined by…
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is…
A new type of (Ga,Mn)As microstructures with laterally confined electronic and magnetic properties has been realized by growing (Ga,Mn)As films on [1-10]-oriented ridge structures with (113)A sidewalls and (001) top layers prepared on…
We experimentally study the optical emission of a thin quantum well and its dynamic modulation by a surface acoustic wave (SAW). We observe a characteristic transition of the modulation from one maximum to two maxima per SAW cycle as the…
Recently, new quantum features have been studied in the area of ridged quantum wells (RQW). Periodic ridges on the surface of the quantum well layer impose additional boundary conditions on the electron wave function and reduce the quantum…
The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network samples grown with different average wall-widths are…
Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled…
We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The optical properties are compared to realistic 8-band…
The electronic structure of an infinite 1D array of vertically coupled InAs/GaAs strained quantum dots is calculated using an eight-band strain-dependent k-dot-p Hamiltonian. The coupled dots form a unique quantum wire structure in which…
Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a…
We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample…
Fast, efficient, and low power modulation of light at microwave frequencies is crucial for chip-scale classical and quantum processing as well as for long-range networks of superconducting quantum processors. A successful approach to bridge…
We calculate the intersubband absorption linewidth in quantum wells (QWs) due to scattering by interface roughness, LO phonons, LA phonons, alloy disorder, and ionized impurities, and compare it with the transport energy broadening that…