Related papers: Sidewall quantum wires on GaAs(001) substrates

The theoretical studies of optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices with strain-induced lateral ordering are presented. Valence-band anisotropy, band mixing, and…

We present the findings for the fractional quantum conductance of holes that is caused by the edge channels in the silicon nanosandwich prepared within frameworks of the Hall geometry. This nanosandwich represents the ultra-narrow p-type…

Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were…

We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their…

A design strategy for achieving broadband optical gain in GaSb-based semiconductor amplifiers operating beyond 2 \mu m is presented. By employing asymmetric GaInSb/AlGaAsSb quantum wells (QWs) of varying thicknesses, a flat and wide gain…

GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such…

We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the…

We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density…

For electrons above a superfluid helium film suspended on a specially designed dielectric substrate, $z=h(y)$, we obtain that both the transverse, along $z$, and the lateral, along $y$, quantizations are strongly enhanced due to a strong…

GaN nanowire ensembles with axial InGaN multi-quantum wells (MQWs) were grown by molecular beam epitaxy. In a series of samples, we varied the In content in the MQWs from almost zero to about 20%. Within the nanowire ensemble, the MQWs…

We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth…

Charge transport in GaN quantum well (QW) devices grown in non-polar direction has been theoretically investigated . Emergence of anisotropic line charge scattering mechanism originating as a result of anisotropic rough surface morphology…

We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires…

We present results on electron transport in quasi-one dimensional (1D) quantum wires in GaAs/AlGaAs heterostructures obtained using an asymmetric confinement potential. The variation of the energy levels of the spatially quantized states is…

The linewidths and the energy shifts of the resonant states of the impurity electron in GaAs-based quantum wells (QWs) with infinite barriers are calculated. The two-dimensional Schr\"{o}dinger equation for the charge impurity in the QW is…

Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral…

We present a theoretical analysis of the electronic properties of type-II GaAs$_{1-x}$Sb$_{x}$/GaAs quantum rings (QRs), from the perspective of applications in intermediate band solar cells (IBSCs). We outline the analytical solution of…

We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InP substrates.…

We propose that the recently realized T-shaped semiconductor quantum wires (T-wires) could be exploited as three-terminal quantum interference devices. T-wires are formed by intersecting two quantum wells (QWs). By use of a scattering…

We report measurements of the compressibility of a one-dimensional (1D) quantum wire, defined in the upper well of a GaAs/AlGaAs double quantum well heterostructure. A wire defined simultaneously in the lower well probes the ability of the…