Related papers: Few-electrode design for silicon MOS quantum dots
We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…
Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance towards fault-tolerant implementations, but it poses substantial…
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO$_2$ interface which interferes with controllably confining single and few electrons. In this work…
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing.…
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be…
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley…
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…
The present work experimentally demonstrates the fabrication of CVD grown monolayer MoS2 ultra thin quantum well based double barrier resonant tunneling device (RTD) architecture well compatible with conventional CMOS fabrication…
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties…
The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle…
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and…
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…