Related papers: A Ferroelectric Semiconductor Field-Effect Transis…

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2.…

Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…

Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work,…

The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few…

The fundamental property of most single-electron devices with quasicontinuous quasiparticle spectrum on the island is the periodicity of their transport characteristics in the gate voltage. This property is robust even with respect to…

How to control collectively ordered electronic states is a core interest of condensed matter physics. We report an electric field controlled reversible transition from superconductor to ferromagnetic insulator in (Li,Fe)OHFeSe thin flake…

The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution…

Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…

Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…

There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus…

Newly emerged materials from the family of Heuslers and complex oxides exhibit finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than even room temperature. In this work, using the semiclassical…

Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…

Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic…

We propose a tunneling heterostructure by replacing one of the metal electrodes in a metal/ferroelectric/metal ferroelectric tunnel junction with a heavily doped semiconductor. In this metal/ferroelectric/semiconductor tunnel diode, both…

Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in…

We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…

Physical phenomena underlying operation of ferroelectric field-effect transistors (FeFETs) is treated within a unified simulation framework. The framework incorporates the Landau mean-field treatment of free energy of a ferroelectric and…

The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record…

Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC…