Related papers: MOSFET Characterization and Modeling at Cryogenic …

Computing-in-Memory (CiM) is a promising paradigm to address the memory bottleneck constraining traditional systems. Most power-efficient CiM variants can directly perform Boolean operations in non-volatile memory arrays. Higher…

Advances in cryogenic electron microscopy have opened new avenues for probing quantum phenomena in correlated materials. This study reports the installation and performance of a new side-entry condenZero cryogenic cooling system for JEOL…

We present mechanical measurements performed at low temperatures on cantilever-based microelectro-mechanicalstructures(MEMS) coated with a metallic layer. Two very different coatings are presented in order to illustrate the capabilities of…

Large-scale superconducting quantum computing systems entail high-fidelity control and readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input-output bottleneck. Cryo-electronics, based on complementary…

Cryogenic temperatures are the prerequisite for many advanced scientific applications and technologies. The accurate determination of temperature in this range and at the submicrometer scale is, however, nontrivial. This is due to the fact…

The exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and cryogenic electronics. In this context, our study focuses on the characterization at cryogenic…

In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit…

Microscopic imaging of local magnetic fields provides a window into the organizing principles of complex and technologically relevant condensed matter materials. However, a wide variety of intriguing strongly correlated and topologically…

Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for…

Reliable operation of photonic integrated circuits at cryogenic temperatures would enable new capabilities for emerging computing platforms, such as quantum technologies and low-power cryogenic computing. The silicon-on-insulator platform…

This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal…

X-ray calorimetric sample platforms combining specific heat and synchrotron x-ray measurements provide a powerful means to investigate fundamental material properties. Calorimeter cell designs featuring a compact heater and thermometer…

We have developed a calibration system based on a micro-electromechanical systems (MEMS) mirror that is capable of delivering an optical beam over a wavelength range of 180 -- 2000 nm (0.62 -- 6.89 eV) in a sub-Kelvin environment. This…

A model of a multilayer device with non-trivial geometrical structure and nonlinear dependencies of thermodynamic material properties at cryogenic temperatures is suggested. A considered device, called cryogenic cell, is intended for use in…

We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and…

The CCAT Observatory's Fred Young Submillimeter Telescope (FYST) is designed to observe submillimeter astronomical signals with high precision, using receivers fielding state-of-the-art kinetic inductance detector (KID) arrays. Mod-Cam, a…

Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate…

A universal experimental challenge when studying radiation effects on cryogenic devices is to precisely and accurately characterize the position-dependent device response very near the energy detection threshold. We have developed a compact…

Quantifying the temperature of microdevices is critical for probing nanoscale energy transport.Such quantification is often accomplished by integrating resistance thermometers into microdevices. However, such thermometers frequently become…

We present a modeling approach based on the BSIM-IMG compact model to capture the deep-cryogenic behavior of MOSFET devices in a 22-nm FDSOI technology. The modeling flow is based on DC measurements to extract static parameters including…