Cryogenic operation of silicon photonic modulators based on DC Kerr effect
Abstract
Reliable operation of photonic integrated circuits at cryogenic temperatures would enable new capabilities for emerging computing platforms, such as quantum technologies and low-power cryogenic computing. The silicon-on-insulator platform is a highly promising approach to developing large-scale photonic integrated circuits due to its exceptional manufacturability, CMOS compatibility and high component density. Fast, efficient and low-loss modulation at cryogenic temperatures in silicon, however, remains an outstanding challenge, particularly without the addition of exotic nonlinear optical materials. In this paper, we demonstrate DC-Kerr-effect-based modulation at a temperature of 5 K at GHz speeds, in a silicon photonic device fabricated exclusively within a CMOS process. This work opens up the path for the integration of DC Kerr modulators in large-scale photonic integrated circuits for emerging cryogenic classical and quantum computing applications.
Keywords
Cite
@article{arxiv.2007.03395,
title = {Cryogenic operation of silicon photonic modulators based on DC Kerr effect},
author = {Uttara Chakraborty and Jacques Carolan and Genevieve Clark and Darius Bunandar and Jelena Notaros and Michael R. Watts and Dirk R. Englund},
journal= {arXiv preprint arXiv:2007.03395},
year = {2020}
}