Related papers: Atomic scale characterization of graphene p-n junc…
Semiconductor p-n junctions are essential building blocks for modern electronics and optoelectronics. In conventional semiconductors, a p-n junction produces depletion regions of free charge carriers at equilibrium and built-in potentials…
We show that a graphene pnp junction with a central superconducting electrode acts as a Veselago lens for incoming electrons by focusing them and their phase-conjugated counterpart (holes) into different points of the optical axis. This…
We study the charge density distribution, the electric field profile, and the resistance of an electrostatically created lateral p-n junction in graphene. We show that the electric field at the interface of the electron and hole regions is…
Graphene quantum dots provide promising platforms for hosting spin, valley, or spin-valley qubits. Taking advantage of the electrically generated band gap and the ambipolar nature, high-quality quantum dots can be defined in bilayer…
Creation of high quality p-n junctions in graphene monolayer is vital in studying many exotic phenomena of massless Dirac fermions. However, even with the fast progress of graphene technology for more than ten years, it remains…
The motion of massless Dirac-electrons in graphene mimics the propagation of photons. This makes it possible to control the charge-carriers with components based on geometrical-optics and has led to proposals for an all-graphene…
We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as…
Focusing of electron waves in graphene p-n junctions is a striking manifestation of fermionic negative refraction. We analyze lensing in smooth p-n junctions and find that it differs in several interesting ways from that in the previously…
In this paper we describe a graphene p-n junction created by chemical doping. We find that chemical doping does not reduce mobility in contrast to top-gating. The preparation technique has been developed from systematic studies about…
One of the unique features of graphene is that the Fermi wavelength of its charge carriers can be tuned electrostatically over a wide range. This allows in principle to tune the transparency of a pn-junction electrostatically, as this…
Combining experiment and theory, we investigate how the naturally created heterojunction at a graphene and metallic contact is modulated via interaction with molecular hydrogen (H2). Due to electrostatic interaction, a Cr/Au electrode…
We consider conductance mapping of the snake-orbits confined along the n-p junction defined in graphene by the electrostatic doping in the quantum Hall regime. We explain the periodicity of conductance oscillations at the magnetic field and…
We investigate the transport characteristics of monolayer graphene p-n junctions by means of the non-equilibrium Green's function technique. It is shown that thanks to the high interband tunneling of chiral fermions and to a finite bandgap…
We study by first-principles calculations a densely packed island of organic molecules (F4TCNQ) adsorbed on graphene. We find that with electron doping the island naturally forms a p-n junction in the graphene sheet. For example, a doping…
We report a first principles investigation of photocurrent generation by graphene PN junctions. The junctions are formed by either chemically doping with nitrogen and boron atoms, or by controlling gate voltages. Non-equilibrium Green's…
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed,…
In the last decade, graphene has become an exciting platform for electron optical experiments, in many aspects superior to conventional two-dimensional electron gases (2DEGs). A major advantage, besides the ultra-large mobilities, is the…
Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically…
Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create…
Ballistic transport in graphene p-n junctions in the presence of magnetic field exhibits two distinct regimes: At low fields, transport is partially suppressed by the field. When the field exceeds a certain critical value, the junction is…