Creation of high quality p-n junctions in graphene monolayer is vital in studying many exotic phenomena of massless Dirac fermions. However, even with the fast progress of graphene technology for more than ten years, it remains conspicuously difficult to generate nanoscale and atomically-sharp p-n junctions in graphene. Here, we employ monolayer-vacancy-island engineering of Cu surface to realize nanoscale p-n junctions with atomically-sharp boundaries in graphene monolayer. The variation of graphene-Cu separations around the edges of the Cu monolayer-vacancy-island affects the positions of the Dirac point in graphene, which consequently lead to atomically-sharp p-n junctions with the height as high as 660 meV in graphene. The generated sharp p-n junctions isolate the graphene above the Cu monolayer-vacancy-island as nanoscale graphene quantum dots (GQDs) in a continuous graphene sheet. Massless Dirac fermions are confined by the p-n junctions for a finite time to form quasi-bound states in the GQDs. By using scanning tunneling microscopy, we observe resonances of quasi-bound states in the GQDs with various sizes and directly visualize effects of geometries of the GQDs on the quantum interference patterns of the quasi-bound states, which allow us to test the quantum electron optics based on graphene in atomic scale.
@article{arxiv.1705.10952,
title = {Generating nanoscale and atomically-sharp p-n junctions in graphene via monolayer-vacancy-island engineering of Cu surface},
author = {Ke-Ke Bai and Jiao-Jiao Zhou and Yi-Cong Wei and Jia-Bin Qiao and Yi-Wen Liu and Hai-Wen Liu and Hua Jiang and Lin He},
journal= {arXiv preprint arXiv:1705.10952},
year = {2018}
}