Related papers: The Core Diffusion-Drift Field-Effect Transistor T…
The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This simplification is shown to be valid from magnitudes of the…
We analyze the atom field-effect transistor scheme [J. A. Stickney, D. Z. Anderson and A. A. Zozulya, Phys. Rev. A 75, 013608 (2007)] using the standard tools of nonequlilibrium dynamics. In particular, we study the deviations from the…
Semi-Dirac semimetals have received enthusiastic research both theoretically and experimentally in the recent years. Due to the anisotropic dispersion, its physical properties are highly direction-dependent. In this work we employ the…
The bias dependence of the tunnel magnetoresistance (TMR) of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the non-equilibrium Green's functions method with density functional…
Topological insulators (TIs) have been considered as promising candidates for next generation of electronic devices due to their topologically protected quantum transport phenomena. In this work, a scheme for atomic-scale field effect…
This paper revisits the modeling of multicomponent diffusion within the framework of thermodynamics of irreversible processes. We briefly review the two well-known main approaches, leading to the generalized Fick-Onsager multicomponent…
The study investigates the influence of negative capacitance on the transfer characteristics of vdW FETs on the heterophase of CIPS ferroelectric. Notably, a less pronounced NC resulting from the spatial distribution of the ferroelectric…
For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model, which precisely describes…
We present a methodology based on quantum mechanics for assigning quantum conductivity when an ac field is applied across a variable gap between two plasmonic nanoparticles with an insulator sandwiched between them. The quantum tunneling…
The conductance of ballistic graphene at the neutrality point is due to coherent electron tunneling between the leads, the so called pseudodiffusive regime. The conductance scales as function of the sample dimensions in the same way as in a…
The effect of a constant electric field on two-photon absorption in a semiconductor is calculated using an independent-particle theory. The theoretical framework is an extension of a theory of the one-photon Franz-Keldysh effect [Wahlstrand…
Discontinuity of dielectric constants at the interface is a common feature of all nanostructures and semiconductor heterostructures. Near such interfaces, a charged particle creates a singular self-interaction potential which may be…
In this paper, we focus on the performance of a nanowire Field Effect Transistor (FET) in the Ultimate Quantum Capacitance Limit (UQCL) (where only one subband is occupied) in the presence of interface traps ($D_{it}$), parasitic…
Application of the generalized continuity equation reveals that the drift current in conductors is equivalent to a negative diffusion current. A phenomenological model of conductivity is developed using the generalized continuity equations.…
The Hohenberg-Kohn theorem of density-functional theory (DFT) is broadly considered the conceptual basis for a full characterization of an electronic system in its ground state by just the one-body particle density. Part I of this review…
We give a detailed discussion of the Quantum Interference Effect Transistor (QuIET), a proposed device which exploits interference between electron paths through aromatic molecules to modulate current flow. In the off state, perfect…
We present the current-density functional theory for the superconductor immersed in the magnetic field. The order parameter of the superconducting state, transverse component of the paramagnetic current-density, and electron density are…
We develop a field theoretical approach based on the temporary basis description as a tool to investigate the transmission properties of a time-driven quantum device. It employs a perturbative scheme for the calculation of the transmission…
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…
We explicitly construct an integrable and strongly interacting dissipative quantum circuit via a trotterization of the Hubbard model with imaginary interaction strength. To prove integrability, we build an inhomogeneous transfer matrix,…