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We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC).…
We consider a two dimensional Turing like system with two diffusing species which interact with each other. Considering the species to be charged, we include the effect of an electric field along a given direction which can lead to a drift…
In superconductors where the coherence length is comparable to the Fermi wavelength, the electronic levels within a vortex core are quantized, and separated by energies of the order of the superconducting gap. The absence of a continuum…
Charge is transported through superconducting SSS single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an ``odd''…
We investigate the transport properties of a quantum wire of weakly interacting fermions in the presence of local particle loss. We calculate current and conductance in this system due to applied external chemical potential bias that can be…
In order to obtain a reasonably accurate and easily implemented approach to many-electron calculations, we will develop a new Density Functional Theory (DFT). Specifically, we derive an approximation to electron density, the first term of…
The tunneling effect of two-dimensional Dirac fermions in a constant magnetic field is studied. This can be done by using the continuity equation at some points to determine the corresponding reflexion and transmission coefficients. For…
Resonant tunneling in an open mesoscopic quantum dot is proposed as a vehicle to realize a tunable Fermi-edge resonance with variable coupling strength. We solve the x-ray edge problem for a generic nonseparable scatterer and apply it to…
When driven by a potential bias between two finite reservoirs, the particle current across a quantum system evolves from an initial loading through a coherent, followed by a metastable phase, and ultimately fades away upon equilibration. We…
In this work, the consequence of the high band-edge density of states on the carrier statistics and quantum capacitance in transition metal dichalcogenide two-dimensional semiconductor devices is explored. The study questions the validity…
We theoretically investigate the electron transport properties for a semiconductor quantum wire containing a single finite-size attractive impurity under an external terahertz electromagnetic field illumination in the ballistic limit.…
Understanding the operation mode of a two-dimensional (2D) material-based field-effect transistor (FET) is one of the most essential issues in the study of electronics and physics. The existing Schottky barrier-FET model for devices with…
A diffuse-interface model for microstructure with an arbitrary number of components and phases was developed from basic thermodynamic and kinetic principles and formalized within a variational framework. The model includes a composition…
We show that the energy functional of ensemble Density Functional Theory (DFT) [Perdew et al., Phys. Rev. Lett. 49, 1691 (1982)] in systems with attractive interactions is a convex function of the fractional particle number N and is given…
A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…
The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit…
The electron velocity-electric field characteristics in short channel length (50-100 nm) amorphous oxide field-effect transistors (FETs) are described using measured experimental data from indium gallium zinc oxide (IGZO) FETs in…
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…
We determined the interface state density ($D_{\rm it}$) distributions in the vicinity of the conduction band edge in silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures by reproducing the experimental current-voltage…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…