Related papers: Quantum Hall Effect in Electron-Doped Black Phosph…
We study the magnetotransport properties of dual-gated graphene bilayers, in which the total density and layer density imbalance are independently controlled. As the bilayer is imbalanced we observe the emergence of a quantum Hall state…
The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very…
The energy spectrum of a two-dimensional electron gas (2DEG) in the fractional quantum Hall regime interacting with an optically injected valence band hole is studied as a function of the filling factor $\nu$ and the separation $d$ between…
We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct…
We have analyzed the effects of the anisotropic energy bands of phosphorene on magnetoroton branches for electrons and holes in the two Landau levels close to the band edges. We have found that the fractional quantum Hall effect gap in the…
We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the formation of multiple \emph{p-n} junctions. Electron transport…
Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90 degree corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both…
Starting from the photon self-energy tensor in a magnetized medium, the 3D complete antisymmetric form of the conductivity tensor is found in the static limit of a fermion system $C$ non-invariant under fermion-antifermion exchange. The…
The high-frequency conductivity of Si delta-doped GaAs/AlGaAs heterostructures is studied in the integer quantum Hall effect (QHE) regime, using acoustic methods. Both the real and the imaginary parts of the complex conductivity are…
In this paper, we develop a unified theory for describing Hall effect in various electronic systems based on a pure electron picture (without the hole concept). We argue that the Hall effect is the magnetic field induced symmetry breaking…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…
Phosphorene is a novel two-dimensional material that can be isolated through mechanical exfoliation from layered black phosphorus, but unlike graphene and silicene, monolayer phosphorene has a large band gap. It was thus unsuspected to…
Most functionalities of modern electronic circuits rely on the possibility to modify the path fol- lowed by the electrons using, e.g. field effect transistors. Here we discuss the interplay between the modification of this path and the…
The quantum geometric structure of electrons introduces fundamental insights into understanding quantum effects in materials. One notable manifestation is the non-linear Hall effect (NLHE), which has drawn considerable interest for its…
We present a different approach to the fractional quantum Hall effect (FQHE), focusing it as a consequence of the change in the symmetry of the Hamiltonian of every electron in a two-dimensional electron gas (2DEG) under the application of…
Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far failed on binary TI compounds such as Bi2Se3 due to high…
The interplay between quantum geometry and magnetic order offers a novel strategy for designing next-generation nanodevices. Here, we demonstrate that interlayer magnetic coupling in two-dimensional (2D) CoPSe3 bilayers enables precise…
Quantum anomalous Hall (QAH) effect generates quantized electric charge Hall conductance without external magnetic field. It requires both nontrivial band topology and time-reversal symmetry (TRS) breaking. In most cases, one could break…
We review recent investigations of the femtosecond non-linear optical response of the two-dimensional electron gas (2DEG) in a strong magnetic field. We probe the Quantum Hall (QH) regime for filling factors $\nu \sim 1$. Our focus is on…
The metal contacts on 2D black phosphorus field-effect transistor and photodetectors are studied. The metal work functions can significantly impact the Schottky barrier at the metal-semiconductor contact in black phosphorus devices. Higher…