Related papers: Quantum Hall Effect in Electron-Doped Black Phosph…
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically…
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter…
We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to…
Atomic layers of black phosphorus (P) isolated from its layered bulk make a new two-dimensional (2D) semiconducting crystal with sizable direct bandgap, high carrier mobility, and promises for 2D electronics and optoelectronics. However,…
Two-dimensional materials and their heterostructures have emerged as a new class of materials for not only fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to…
The quasi-quantized Hall effect (QQHE) is the three-dimensional (3D) counterpart of the integer quantum Hall effect (QHE),exhibited only by two-dimensional (2D) electron systems. It has recently been observed in layered materials,…
Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced…
This work treats the effects of disorder and interactions in a quantum Hall ferromagnet, which is realized in a two-dimensional electron gas (2DEG) in a perpendicular magnetic field at Landau level filling factor equal one. We study the…
The double carrier transport has been observed in thin film black phosphorus (BP) field effect transistor (FET) devices in highly electron doped region. BP thin films with typical thickness of 15 nm were encapsulated by hexagonal boron…
We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor (EDLT) configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of 5*10^3. The band gap was…
The planar Hall effect in 3D systems is an effective probe for their Berry curvature, topology, and electronic properties. However, the Berry curvature-induced conventional planar Hall effect is forbidden in 2D systems as the out-of-plane…
By means of degenerate four-wave mixing (FWM), we investigate the quantum coherence of electron-hole pairs in the presence of a two-dimensional electron gas in modulation-doped GaAs-AlGaAs quantum wells in the quantum Hall effect regime.…
We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic…
Quantum anomalous Hall effect (QAHE) is a fundamental transport phenomenon in the field of condensed-matter physics. Without external magnetic field, spontaneous magnetization combined with spin-orbit coupling give rise to a quantized Hall…
The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of…
The fractional quantum Hall (FQH) effect refers to the strongly-correlated phenomena and the associated quantum phases of matter realized in a two-dimensional gas of electrons placed in a large perpendicular magnetic field. In such systems,…
The photovoltaic effect is one of the fundamental light-matter interactions in light energy harvesting. In conventional photovoltaic solar cells, the photogenerated charge carriers are extracted by the built-in electric field of a PN…
A new model of momentum and electric field transfer between two adjacent 2D electron systems in the Quantum Hall Effect is proposed. The drag effect is due to momentum transfer from the vortex system of one layer to the vortex system of…
We study the quantum Hall effect(QHE) on the Kagom\'{e} lattice with anisotropy in one of the hopping integrals. We find a new type of QHE characterized by the quantization rules for Hall conductivity $\sigma_{xy}=2ne^{2}/h$ and Landau…
The quantum Hall effect (QHE) is a topologically protected phenomenon which has been observed in various systems. In experiments, the size of Hall bar device to realize the QHE is generally much larger than the phase coherence length, in…