Related papers: Quantum Hall Effect in Electron-Doped Black Phosph…
Development of new, high quality functional materials has been at the forefront of condensed matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the material base of two-dimensional electron systems.…
We study the quantum Hall effect of 2D electron gas in black phosphorus in the presence of perpendicular electric and magnetic fields. In the absence of a bias voltage, the external magnetic field leads to a quantization of the energy…
Quantum wells constitute one of the most important classes of devices in the study of 2D systems. In a double layer QW, the additional "which-layer" degree of freedom gives rise to celebrated phenomena such as Coulomb drag, Hall drag and…
We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the…
Two-dimensional electron gases (2DEG) have been an important source of experimental discovery and conceptual development in condensed matter physics for decades. When combined with the unique electronic properties of two-dimensional (2D)…
The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despite the susceptibility of black phosphorus to…
Magnetoresistance measurements have been performed on a gated two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear features of the quantum Hall effect were…
Two-dimensional electron systems (2DES) are promising for investigating correlated quantum phenomena. In particular, 2D oxides provide a platform that can host various quantum phases such as quantized Hall effect, superconductivity, or…
Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs/AlGaAs heterostructure enable a large variety of applications from fundamental research to high speed transistors. Electrical circuits are thereby…
We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar device allowing for the independent control of the vertical…
Up to almost the last two decades all the experimental results concerning the quantum Hall effect (QHE), i.e., the observation of plateaux at integer (IQHE) or fractional (FQHE) values of the constant h/e2, were related to quantum-wells in…
In the fractional quantum Hall effect regime we measure diagonal ($\rho_{xx}$) and Hall ($\rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions,…
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted…
Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation phenomena in low dimensions. A great progress has been…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
As a high mobility two-dimensional semiconductor with strong structural and electronic anisotropy, atomically thin black phosphorus (BP) provides a new playground for investigating the quantum Hall (QH) effect, including outstanding…
Contrary to common belief, the current emitted by a contact embedded in a two-dimensional electron gas (2DEG) is quantized in the presence of electric and magnetic fields. This observation suggests a simple, clearly defined model for the…
Up to know all the experimental results concerning the integer and fractional quantum Hall effect are related to semiconductor heterostructures (and more recently with graphene). The common characteristic of all these systems is the…
We present a theoretical framework to describe the integer quantum Hall effect (IQHE) in three-dimensional (3D) electron systems. This extends our previous single-electron approach, which was successfully applied to two-dimensional (2D)…
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…