Related papers: Donors and Deep Acceptors in $\beta$-Ga2O3
We have studied the microwave electrodynamics of single crystal iron-based superconductors Ba$_{0.72}$K$_{0.28}$Fe$_2$As$_2$ (hole-doped, $T_\mathrm{c}$ $\approx $30 K) and Ba(Fe$_{0.95}$Co$_{0.05}$)$_2$As$_2$ (electron-doped,…
Sr2VO{3-delta}FeAs superconductors with different oxygen deficiencies have been successfully fabricated. It is found that the superconducting transition temperature drops down monotonically with the increase of oxygen deficiency. The…
A simple two-band model is used to describe the magnitude and temperature dependence of the magnetic susceptibility, Hall coefficient and Seebeck data from undoped and Co doped BaFe2As2. Overlapping rigid parabolic electron and hole bands…
We report on measurements of the resistivity and Hall coefficient in underdoped GdBa2Cu3O7-d epitaxial thin films grown by off-axis magnetron sputtering. The films have been lithographically patterned allowing precise measurements of the…
The current transport and thermoelectric properties of Fe3O4 / SiO2 / p-type Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300 K. We observe a sharp drop of the in-plane…
The magnetic properties of the diluted magnetic semiconductors (DMS) (Ga, Mn)As and (Ga, Mn)N are investigated by means of an effective Heisenberg model, whose exchange parameters are obtained from first-principle calculations. The…
Doping-induced superconductivity in group IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equilibrium hyperdoping of group III atoms into C, Si, or Ge can…
Two-dimensional (2D) van der Waals (vdW) magnetic materials have attracted a lot of attention owing to the stabilization of long-range magnetic order down to atomic dimensions, and the prospect of novel spintronic devices with unique…
We observe unusually narrow donor-bound exciton transitions (0.4 meV) in the photoluminescence spectra of GaN nanowire ensembles grown on Si(111) substrates at very high (> 850 degrees Celsius) temperatures. The spectra of these samples…
Charge-exchange reactions are an important tool for determining weak-interaction rates. They provide stringent tests for nuclear structure models necessary for modeling astrophysical environments such as neutron stars and core-collapse…
We report on magnetoresistance, Hall and magnetization measurements of Fe2VAl1-xSix Heusler compounds for x= 0.005, 0.015, 0.02. There is a systematic change in the temperature coefficient of resistance (TCR) from negative to positive as…
We employ effective mass theory for degenerate hole-bands to calculate the acceptor binding energies for Be, Mg, Zn, Ca, C and Si substitutional acceptors in GaN and AlN. The calculations are performed through the 6$\times $6…
We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de…
We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga$_{1-x}$Mn$_x$As or $x$=3.2$\times10^{-4}$ Ga$_{1-x}$Be$_x$As. The devices are tailored for interrogation of…
Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at…
We report a method to obtain insights into lower thermal conductivity of \beta-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical…
Hall effect measurements in doped polymer semiconductors are widely reported, but are difficult to interpret due to screening of Hall voltages by carriers undergoing incoherent transport. Here, we propose a refined analysis for such Hall…
The Hall resistivity rho_{xy} of a La_{2/3}(Ca,Pb)_{1/3}MnO_3 single crystal has been measured as a function of temperature and field. The overall behavior is similar to that observed previously in thin-films. At 5 K, rho_{xy} is positive…
Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized…
We report resistivity, Hall coefficient, current-voltage characteristics, and magneto-optical imaging measurements of epitaxial Co-doped BaFe_{2}As_{2} thin films deposited on MgO(001) substrate. The Hall resistivity of the films has a…