Related papers: Donors and Deep Acceptors in $\beta$-Ga2O3

Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were…

We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type…

Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional…

Thin films of the ferromagnet Fe$_2$Ge were grown via molecular beam epitaxy, and their electrical and magneto-transport properties measured for the first time. X-ray diffraction and vibrating sample magnetometry measurements confirmed the…

Low temperature specific heat, C, in magnetic fields up to Hc2 is reported for underdoped Ba(Fe0.955Co0.045)2As2 (Tc=8 K) and for three overdoped samples Ba(Fe1-xCox)2As2 (x=0.103, 0.13, and 0.15, Tc=17.2, 16.5, and 11.7 K respectively).…

Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while…

We use combine high resolution neutron diffraction (HRPD) with density functional theory (DFT) to investigate the exchange striction at the Curie temperature (TC) of Fe2P and to examine the effect of boron and carbon doping on the P site.…

Hall effect and magnetoresistance have been measured on single crystals of $NdFeAsO_{1-x}F_{x}$ with x = 0 ($T_c$ = 0 $ $K) and x = 0.18 ($T_c$ = 50 $ $K). For the undoped samples, strong Hall effect and magnetoresistance with strong…

The low temperature heat capacity C_{p} of Fe_{1-x}Ga_{x} alloys with large magnetostriction has been investigated. The data were analyzed in the standard way using electron ($\gamma T$) and phonon ($\beta T^{3}$) contributions. The Debye…

Two-dimensional transitional metal dichalcogenide (TMD) field-effect transistors (FETs) are promising candidates for future electronic applications, owing to their excellent transport properties and potential for ultimate device scaling.…

Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic…

We report the Hall resistivity, $\rho_{xy}$ of polycrystalline SmFeAsO$_{1-x}$F$_{x}$ for four different fluorine concentrations from the onset of superconductivity through the collapse of the structural phase transition. For the two more…

The transport and magnetic properties of the tetragonal Fe$_{1+\delta}$S were investigated using magnetoresistivity and magnetization within 2$\leq T\leq $300 K, $H\leq$70 kOe and $P\leq$ 3.0 GPa. In addition, room-temperature X-ray…

We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole…

The Fe$_{n}$GeTe$_{2}$ systems are newly discovered two-dimensional van-der-Waals materials, exhibiting magnetism at room temperature. The sub-systems belonging to Fe$_{n}$GeTe$_{2}$ class are special because they show site-dependent…

We develop a two-carrier Hall effect model fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density ($\sim4\times10^{13}$ cm$^2$/Vs) polarization-induced two-dimensional hole gas (2DHG) in a GaN/AlN…

Thermal conductivity \kappa is measured at very low temperatures down to 0.28 K for pure and Mg-doped CuGeO_3 single crystals. The doped samples carry larger amount of heat than the pure sample at the lowest temperature. This is because…

Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge states are hosted by a magnetic energy gap at the Dirac…

Thin films of magnetite (Fe3O4) are grown on single crystal GaAs (100) substrate by pulsed laser deposition. X ray diffraction (XRD) result shows the (111) preferred orientation of the Fe3O4 film and x-ray photoelectron spectroscopy confirm…

We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass spectroscopy (SIMS) analysis that Si flux is not limited by…