Related papers: Donors and Deep Acceptors in $\beta$-Ga2O3
By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect…
Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $\beta$-$Ga_2O_3$ could strongly influence and contribute to the development of the next generation of…
Investigation of Seebeck coefficient in ultra-wide bandgap materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction.…
For $\beta$-$\mathrm{Ga_2O_3}$ only little information exist concerning the thermal properties, especially the thermal conductivity $\lambda$. Here, the thermal conductivity is measured by applying the electrical 3$\omega$-method on…
$\beta$-Ga$_2$O$_3$ is a leading ultra-wide band gap semiconductor, but its performance depends on precise control over dopant incorporation and stability. In this work, we use first-principles calculations to systematically assess the…
Ultra-wide bandgap semiconductors such as \b{eta}-Ga2O3 are ideal materials for next-generation power electronic devices. Electronic and mechanical properties of \b{eta}-Ga2O3 can be tuned by alloying with other sesquioxides, notably Al2O3…
We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical vapor deposition (LPCVD) reactor with either an oxygen or…
Density functional theory calculations are used to show that it is possible to dope semiconducting transition metal dichalcogenides (TMD) such as MoS$_2$ and WS$_2$ with electrons and/or holes either by chemical substitution or by…
Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of…
Measurements of the spectral emission properties of an iron-doped a beta-Ga2O3(010) photocathode at 300 K reveal the presence of an ultracold contribution to the total electron beam emission with a 6 meV mean transverse energy (MTE) in the…
Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and,…
We report the doping high concentration of tetravalent Ge4+ ions (5 mol % for x = 0.05 to 30 mol % for x = 0.30) at the Fe3+ sites of Fe2-xGexO3 system by chemical coprecipitation route. The charge state of Fe and Ge ions has been modified…
We report the optical, electrical, and structural properties of Si doped $\beta$-Ga$_2$O$_3$ films grown on (010)-oriented $\beta$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of…
The electrical and magnetic properties of p-type cubic (Ga,Mn)N thin films grown by plasma-assisted molecular beam epitaxy are reported. Hole concentrations in excess of 1018 cm-3 at room temperature are observed. Activated behaviour is…
We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and…
We have stabilized the {\alpha}-Fe1.6Ga0.4O3 (Ga doped {\alpha}-Fe2O3) system in rhombohedral structure. The system has shown magnetically canted ferromagnetic state and ferroelectric properties at room temperature. In first time, we…
We introduce a deep-recessed gate architecture in $\beta$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped…
The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type…
We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional electron gas in GaAs quantum wells, and additionally doped with smaller amounts of…
Beta-phase gallium oxide (beta-Ga2O3) is prone to the spontaneous formation of donor defects but poses a formidable challenge in achieving high-quality p-type doping, mainly due to its exceptionally low valence band maximum (VBM). In this…