For β-Ga2O3 only little information exist concerning the thermal properties, especially the thermal conductivity λ. Here, the thermal conductivity is measured by applying the electrical 3ω-method on Czochralski-grown β-Ga2O3 bulk crystals, which have a thickness of 200μm and 800μm. At room temperature the thermal conductivity along the [100]-direction in Mg-doped electrical insulating and undoped semiconducting β-Ga2O3 is confirmed as 13±1Wm−1K−1 for both crystals. The thermal conductivity increases for decreasing temperature down to 25K to λ(25K)=(5.3±0.6)⋅102Wm−1K−1. The phonon contribution of λ dominates over the electron contribution below room temperature. The observed function λ(T) is in accord with phonon-phonon-Umklapp scattering and the Debye-model for the specific heat at T≳90K which is about 0.1 fold of the Debye-temperature θD. Here a detailed discussion of the phonon-phonon-Umklapp scattering for T<θD is carried out. The influence of point defect scattering is considered for T<100K.
@article{arxiv.1407.4272,
title = {Temperature-dependent thermal conductivity in Mg-doped and undoped $\beta$-$\mathrm{Ga_2O_3}$ bulk-crystals},
author = {Martin Handwerg and Rüdiger Mitdank and Zbigniew Galazka and Saskia F. Fischer},
journal= {arXiv preprint arXiv:1407.4272},
year = {2015}
}