English

Temperature-dependent thermal conductivity in Mg-doped and undoped $\beta$-$\mathrm{Ga_2O_3}$ bulk-crystals

Materials Science 2015-02-10 v2

Abstract

For β\beta-Ga2O3\mathrm{Ga_2O_3} only little information exist concerning the thermal properties, especially the thermal conductivity λ\lambda. Here, the thermal conductivity is measured by applying the electrical 3ω\omega-method on Czochralski-grown β\beta-Ga2O3\mathrm{Ga_2O_3} bulk crystals, which have a thickness of 200 μm200~\mathrm{\mu m} and 800 μm800~\mathrm{\mu m}. At room temperature the thermal conductivity along the [100]-direction in Mg-doped electrical insulating and undoped semiconducting β\beta-Ga2O3\mathrm{Ga_2O_3} is confirmed as 13±1 Wm1K113\pm 1~\mathrm{Wm^{-1}K^{-1}} for both crystals. The thermal conductivity increases for decreasing temperature down to 25 K25~\mathrm{K} to λ(25 K)=(5.3±0.6)102 Wm1K1\lambda(25~\mathrm{K})=(5.3\pm 0.6)\cdot 10^2~\mathrm{Wm^{-1}K^{-1}}. The phonon contribution of λ\lambda dominates over the electron contribution below room temperature. The observed function λ(T)\lambda(T) is in accord with phonon-phonon-Umklapp scattering and the Debye-model for the specific heat at T90 KT\gtrsim 90~\mathrm{K} which is about 0.10.1 fold of the Debye-temperature θD\theta_\mathrm{D}. Here a detailed discussion of the phonon-phonon-Umklapp scattering for T<θDT< \theta_\mathrm{D} is carried out. The influence of point defect scattering is considered for T<100 KT<100~\mathrm{K}.

Keywords

Cite

@article{arxiv.1407.4272,
  title  = {Temperature-dependent thermal conductivity in Mg-doped and undoped $\beta$-$\mathrm{Ga_2O_3}$ bulk-crystals},
  author = {Martin Handwerg and Rüdiger Mitdank and Zbigniew Galazka and Saskia F. Fischer},
  journal= {arXiv preprint arXiv:1407.4272},
  year   = {2015}
}

Comments

11 pages, 6 figures