Related papers: Donors and Deep Acceptors in $\beta$-Ga2O3
The Hall coefficient of Gd-doped La_{2/3}Ca_{1/3}MnO_3 exhibits Arrhenius behavior over a temperature range from 2T_c to 4T_c, with an activation energy very close to 2/3 that of the electrical conductivity. Although both the doping level…
In this work, we report on the growth of high-mobility $\beta$-Ga$_2$O$_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature…
The Hall conductivities of HgBa_{2}CaCu_{2}O_{6+\delta}and HgBa_{2}Ca_{2}Cu_{3}O_{8+\delta} thin films are investigated for a magnetic field parallel to the c axis. The mixed-state Hall conductivity for these compounds is well described by…
We investigate a large variation in a diagonal component of the linear magnetoelectric (ME) susceptibility in a polar ferrimagnet Mn2Mo3O8 while changing the magnetic-ion site from orbital-quenched Mn2+ to Fe2+ with strong uniaxial…
Thin films of the high-temperature superconductor HgBa$_2$CaCu$_2$O$_{6+\delta}$ have been prepared on SrTiO$_3$ substrates by pulsed-laser deposition of precursor films and subsequent annealing in mercury-vapor atmosphere. The…
The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation…
Despite the highly porous nature with significantly large surface area, metal organic frameworks (MOFs) can be hardly used in electronic, and optoelectronic devices due to their extremely poor electrical conductivity. Therefore, the study…
The dielectric properties of Fe$_{3}$O$_{4}$ magnetic nanoparticles with an insulating coating layer of SiO$_{2}$ were investigated. At high temperatures, the changes of the dielectric constant and loss induced by the magnetic field are…
We measured the temperature dependence of the linear high field Hall resistivity of La_0.67Ca_0.33MnO_3 (T_C=232K) and La_0.67Sr_0.33MnO_3 (T_C=345K) thin films in the temperature range from 4K up to 360K in magnetic fields up to 20T. At…
Thin films of the wide band gap semiconductor $\beta$-Ga$_2$O$_3$ have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on…
Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+{\delta}} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content ({\delta}) were studied…
Magnetoresistance and Hall resistance measurements have been carried out in fastcooled single crystals of Bi2Se3-xTex (x: 0 to 2) in 4 to 300 K temperature range, under magnetic fields up to 15 T. The variation of resistivity with…
We present a comprehensive study on anisotropic magnetocaloric porperties of the van der Waals weak-itinerant ferromagnet Fe$_{3-x}$GeTe$_2$ that features gate-tunable room-temperature ferromagnetism in few-layer device. Intrinsic…
The realization of $p$-type doping in wide-band-gap oxide semiconductors remains a major challenge, particularly in $\beta-Ga_2O_3$ where nitrogen has long been considered a potential acceptor dopant but has consistently failed to produce…
We investigate the temperature dependence of the intrinsic anomalous Hall conductivity in Fe$_3$Ge, which is a ferromagnetic topological metal. We observe a significant anisotropy in the anomalous Hall conductivity between in-plane and…
The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser radiation. It is shown this approach giving an opportunity to…
Beta-Ga2O3 is an ultra-wide bandgap semiconductor with emerging applications in power electronics. The introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of…
Magnetotransport properties of a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T=1.4 K and 4.2 K. The structure studied consists of a Si…
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high…
beta-Ga2O3 is a wide bandgap semiconductor with electrical properties better than SiC and GaN which makes it promising for applications of next-generation power devices. However, the thermal conductivity of \b{eta}-Ga2O3 is more than one…