Related papers: Quantum phase transition in ultrahigh mobility SiG…
Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional electron system (2DES) in Si in the vicinity of the metal-insulator transition (MIT) persists in parallel magnetic fields B of up to 9 T. At low…
The two-dimensional organic conductor $\alpha$-(BEDT-TTF)$_2$I$_3$ undergoes a metal-insulator transition at $T_{\rm CO}=135$ K due to electronic charge ordering. We have conducted time-resolved investigations of its electronic properties…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
The effect of pressure on the low-temperature states of the Re3Ge7 is investigated by both electrical and Hall resistance and magnetization measurements. At ambient pressure, the temperature dependent resistance of Re3Ge7 behaves…
Zero-temperature or quantum phase transitions in itinerant electronic systems both with and without quenched disordered are discussed. Phase transitions considered include, the ferromagnetic transition, the antiferromagnetic transition, the…
Dynamical mean-field theory (DMFT) has been employed in conjunction with density functional theory (DFT+DMFT) to investigate the metal-insulator transition (MIT) of strongly correlated $3d$ electrons due to quantum confinement. We shed new…
We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as…
We performed dielectric spectroscopy on polypyrrole near the metal-insulator transition (MIT) down to 2 K. We evaluate the dependence of the plasma frequency and the scattering time (t) on the distance to the MIT, characterized by the…
We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…
According to the scaling theory of localization, all quantum electronic states are localized in two-dimensional (2D) systems. One consequence of the theory is that there is no quantum percolation transition in 2D. However, in a real system…
This article is aimed at a pedagogical introduction to the physics of quantum phase transitions that is unique to metallic systems. It has been recognized for some time that quantum criticality can result in a breakdown of Landau's Fermi…
We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…
Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility…
The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly…
We report temperature and density dependences of the spin susceptibility of strongly interacting electrons in Si inversion layers. We measured (i) the itinerant electron susceptibility $\chi^*$ from the Shubnikov-de Haas oscillations in…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility…
To explain the main features of the metal-insulator transition (MIT) in 2D we suggest a simple model taking into account strongly localized states in the band tail of 2D conductivity band with a specific emphasize of a role of…
Metallic states near the Mott insulator show a variety of quantum phases including various magnetic, charge ordered states and high-temperature superconductivity in various transition metal oxides and organic solids. The emergence of a…
In contrast to the first-order correlation-driven Mott metal-insulator transition (MIT), contin- uous disorder-driven transitions are intrinsically quantum critical. Here, we investigate transport quantum criticality in the Falicov-Kimball…