Related papers: Quantum phase transition in ultrahigh mobility SiG…
Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT)…
The underlying mechanism of the metal-to-insulator transition (MIT) in BaVS$_3$ is investigated, using dynamical mean-field theory in combination with density functional theory. It is shown that correlation effects are responsible for a…
Metal-insulator transitions driven by magnetic fields have been extensively studied in 2D, but a 3D theory is still lacking. Motivated by recent experiments, we develop a scaling theory for the metal-insulator transitions in the…
Two-dimensional (2D) materials provide unique opportunities to realize emergent phenomena by reducing dimensionality. Using scanning tunneling microscopy combined with first-principles calculations, we determine an intriguing case of a…
Metal-to-insulator transitions (MITs), particularly near room temperature, have been extensively studied in nonmagnetic and conventional ferromagnetic and antiferromagnetic systems, yet the co-emergence of MIT and altermagnetism (AM)…
The metal-insulator transition (MIT) is one of the remarkable electrical transport properties of atomically thin molybdenum disulphide (MoS2). Although the theory of electron-electron interactions has been used in modeling the MIT phenomena…
We systematically investigated the low-temperature transport properties of a series of NbN epitaxial films with thickness $t$ ranging from $\sim$2.0 to $\sim$4.0 nm. The films undergo a superconductor-insulator transition (SIT) with…
Exploiting the spin resonance of two-dimensional (2D) electrons in SiGe/Si quantum wells we determine the carrier-density-dependence of the magnetic susceptibility. Assuming weak interaction we evaluate the density of states at the Fermi…
We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the…
Here, we report a systematic study on the Hall-effect of the semi-metallic state of bulk MoTe$_2$, which was recently claimed to be a candidate for a novel type of Weyl semi-metallic state. The temperature ($T$) dependence of the carrier…
We focus on the central problem of discriminating between metallic and insulating behaviour in amorphous alloys formed between a semiconductor and a metal. For this, the logarithmic temperature derivative of the conductivity, w = d ln sigma…
We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system…
In a recent experiment, Siegrist et al. [Nature Materials 10, 202 (2011)] investigated the metal-insulator transition (MIT) of GeSb_2Te_4 on increasing annealing temperature. The authors conclude that this material exhibits a discontinuous…
In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after cooling it down to 4K at different fixed values of the gate…
In the paper, PRB {\bf 77}, 085118 (2008), the authors conclude that the observation of Ti-doping induced half-metallicity in SrRu$_{1-x}$TI$_x$O$_3$ within the limit of local density approximations is not valid as the experimental results…
We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures…
Ignited by the discovery of the metal-insulator transition, the behaviour of low-disorder two-dimensional (2D) electron systems is currently the focus of a great deal of attention. In the strongly-interacting limit, electrons are expected…
Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all…
Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its driving mechanism remains controversial. We have studied the…
The rich variety of phase transitions observed in the strained p-SiGe system are considered and compared. It is shown that the integer quantum Hall effect transitions, the Hall insulating transition and the re-entrant transition into an…