Related papers: Charge-Based Model for Ultrathin Junctionless DG F…
We study a model of 2D QFT with boundary interaction, in which two-component massless Bose field is constrained to a circle at the boundary. We argue that this model is integrable at two values of the topological angle, $\theta =0$ and…
In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate…
Detection of moving charge in free space is presented in the framework of single electron CMOS devices. It opens the perspective for construction of new type detectors for beam diagnostic in accelerators or for the detection of solar wind.…
We investigate an extension of excited state mean-field theory in which the energy expression is augmented with density functional components in an effort to include the effects of weak electron correlations. The approach remains…
Expressions for generalized charge stiffness constant at zero temperature are derived corresponding to low dimensional hole doped quantum antiferromagnets, describable by the t-J-like models, with a view to understanding fermionic pairing…
A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…
We describe charging a quantum dot induced electrostatically within a semiconducting graphene nanoribbon by electrons or holes. The applied model is based on a tight-binding approach with the electron-electron interaction introduced by a…
A new type of disorder-driven electronic percolation transition is found for two-dimensional electron gas (2DEG), based on a quantum cellular automaton model. This transition is shown to be accompanied with a metal-insulator transition, as…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
A theoretical model of high-T_c Josephson Field Effect Transistors (JoFETs) based on a Ginzburg-Landau free energy expression whose parameters are field- and spatially- dependent is developed. This model is used to explain experimental data…
Measuring charge fluctuations within a subregion provides a powerful probe of quantum many-body systems. In two spatial dimensions, the shape dependence of the dimensionless corner contribution encodes universal data of quantum critical…
Gatemon qubits are based on a superconductor-quantum dot-superconductor (S-QD-S) junction which enables in situ electrostatic tuning via a gate electrode. For a single-channel QD this structure gives rise to two subgap Andreev bound states…
We propose a simple analytical model of a metal-oxide-semiconductor field-effect transistor with a lateral resonant gate based on the coupled electromechanical equations, which are self-consistently solved in time. All charge densities…
A simplified density functional theory (DFT) method for charged adsorbates on an ultrathin, insulating film supported by a metal substrate is developed and presented. This new method is based on a previous DFT development that uses a…
Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders…
We address the question whether features known from quantum chromodynamics (QCD) can possibly also show up in solid-state physics. It is shown that spinless fermions of charge $e$ on a checkerboard lattice with nearest-neighbor repulsion…
The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of quantum wells and strong scattering. Hence, the full band…
The charge asymmetry due to higher-order QED corrections in elastic lepton-proton scattering is estimated without employing the ultrarelativistic approximation. Our calculation is performed by generalizing the soft-photon approximation…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…
A mixed quantum-classical approach to simulate the coupled dynamics of electrons and nuclei in nanoscale molecular systems is presented. The method relies on a second order expansion of the Lagrangian in time-dependent density functional…