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Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating…

Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal…

Materials Science · Physics 2012-10-10 P. A. Mortemousque , T. Sekiguchi , C. Culan , M. P. Vlasenko , R. G. Elliman , L. S. Vlasenko , K. M. Itoh

We demonstrate an efficient control of $^{29}$Si nuclear spin orientation for specific lattice sites near $^{31}$P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden…

Solid-state quantum light sources offer a scalable pathway for interfacing stationary spin qubits with flying photonic qubits, forming the backbone of future quantum networks. Telecom-band spin-photonic qubits, operating in the 1260-1675 nm…

Quantum Physics · Physics 2025-12-09 Md Sakibul Islam , Kuldeep Singh , Yunhe Zhao , Nitesh Singh , Wayesh Qarony

The electron and nuclear spins of the shallow donor 31P are promising qubit candidates invoked in many proposed Si-based quantum computing schemes. We have recently shown that the near-elimination of inhomogeneous broadening in highly…

We report measurements of electron spin echo envelope modulation (ESEEM) performed at millikelvin temperatures in a custom-built high-sensitivity spectrometer based on superconducting micro-resonators. The high quality factor and small mode…

Defects in crystals are leading candidates for photon-based quantum technologies, but progress in developing practical devices critically depends on improving defect optical and spin properties. Motivated by this need, we study a new defect…

The electrical detection of spin echoes via echo tomography is used to observe decoherence processes associated with the electrical readout of the spin state of phosphorus donor electrons in silicon near a SiO$_2$ interface. Using the…

Quantum Physics · Physics 2008-05-06 Hans Huebl , Felix Hoehne , Benno Grolik , Andre R. Stegner , Martin Stutzmann , Martin S. Brandt

We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multi-frequency pump-probe experiment in pulsed electrically…

Materials Science · Physics 2010-02-02 Felix Hoehne , Hans Huebl , Bastian Galler , Martin Stutzmann , Martin S. Brandt

Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…

Mesoscale and Nanoscale Physics · Physics 2014-08-05 Xiaojie Hao , Rusko Ruskov , Ming Xiao , Charles Tahan , HongWen Jiang

Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control…

Materials Science · Physics 2009-11-11 A. M. Tyryshkin , J. J. L. Morton , S. C. Benjamin , A. Ardavan , G. A. D. Briggs , J. W. Ager , S. A. Lyon

Decoherence of a shallow donor electron spin in silicon caused by electron-lattice interaction is studied. We find that there are two time scales associated with the evolution of the electron spin density matrix: the fast but incomplete…

Condensed Matter · Physics 2009-11-07 D. Mozyrsky , Sh. Kogan , G. P. Berman

Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled…

Mesoscale and Nanoscale Physics · Physics 2018-01-18 L. M. K. Vandersypen , H. Bluhm , J. S. Clarke , A. S. Dzurak , R. Ishihara , A. Morello , D. J. Reilly , L. R. Schreiber , M. Veldhorst

Electric dipole spin resonance is studied theoretically at a shallow donor formed in a nanowire with spin-orbit coupling in a magnetic field. Such system may represent a donor-based qubit. The single discrete energy level of the donor is…

Mesoscale and Nanoscale Physics · Physics 2019-02-06 D. V. Khomitsky , E. A. Lavrukhina , E. Ya. Sherman

The electronic and nuclear spin degrees of freedom for donor impurities in semiconductors form ultra coherent two-level systems that are useful for quantum information applications. Spins naturally have magnetic dipoles, so alternating…

Quantum Physics · Physics 2017-01-25 A. J. Sigillito , A. M. Tyryshkin , T. Schenkel , A. A. Houck , S. A. Lyon

Phosphorus donor nuclear spins in silicon couple weakly to the environment making them promising candidates for high-fidelity qubits. The state of a donor nuclear spin qubit can be manipulated and read out using its hyperfine interaction…

Shallow donors in ZnO are promising candidates for photon-mediated quantum technologies. Utilizing the indium donor, we show that favorable donor-bound exciton optical and electron spin properties are retained in isolated ZnO nanowires. The…

On the quest to understand and reduce environmental noise in Si spin qubits, hyperfine interactions between electron and nuclear spins impose a major challenge. Silicon is a promising host material because one can enhance the spin coherence…

Mesoscale and Nanoscale Physics · Physics 2024-05-20 Lukas Cvitkovich , Peter Stano , Christoph Wilhelmer , Dominic Waldhör , Daniel Loss , Yann-Michel Niquet , Tibor Grasser

Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger…

This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which…