Related papers: Addressable electron spin resonance using donors a…
There is growing interest in bismuth-doped silicon (Si:Bi) as an alternative to the well-studied proposals for silicon based quantum information processing (QIP) using phosphorus-doped silicon (Si:P). We focus here on the implications of…
Achieving strong coherent interaction between qubits separated by large distances holds the key to many important developments in quantum technology, including new designs of quantum computers, new platforms for quantum simulations and…
An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline silicon and silicon dioxide at high magnetic field (B_0 ~ 8.5…
A solid-state quantum computer with dipolar coupling between qubits is proposed. The qubits are formed by the low-lying states of an isolated acceptor in silicon. The system has the scalability inherent to spin-based solid state systems,…
We present a systematic and realistic simulation for single and double phosphorous donors in a silicon-based quantum computer design. A two-valley equation is developed to describe the ground state of phosphorous donors in strained silicon…
The quest to build a quantum computer has been inspired by the recognition of the formidable computational power such a device could offer. In particular silicon-based proposals, using the nuclear or electron spin of dopants as qubits, are…
We use above-bandgap optical excitation, via a 1047 nm laser, to hyperpolarize the $^{31}$P spins in low-doped (N$_D =6\times10^{15}$ cm$^{-3}$) natural abundance silicon at 4.2 K and 6.7 T, and inductively detect the resulting NMR signal.…
Donor spin qubits in silicon offer one- and two-qubit gates with fidelities beyond 99%, coherence times exceeding 30 seconds, and compatibility with industrial manufacturing methods. This motivates the development of large-scale quantum…
Spins confined in quantum dots are a leading candidate for solid-state quantum bits that can be coherently controlled by optical pulses. There are, however, many challenges to developing a scalable multibit information processing device…
Solid-state spin ensembles addressed via superconducting circuits are promising candidates for quantum memory applications, offering multimodal storage capability and second-long coherence times at their clock transition. Implementing…
Individual spins that are coupled to telecommunication photons offer unique promise for distributed quantum information processing once a coherent and efficient spin-photon interface can be fabricated at scale. We implement such an…
Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear…
We present an approach for entangling electron spin qubits localized on spatially separated impurity atoms or quantum dots via a multi-electron, two-level quantum dot. The effective exchange interaction mediated by the dot can be understood…
Quantum coherence is of crucial importance for the applicability of donor based quantum computing. In this Letter we describe the observation of the interference of conduction paths induced by two donors in a nano-MOSFET resulting in a Fano…
We present density functional theory calculations of phosphorus dopants in bulk silicon and of several properties relating to their use as spin qubits for quantum computation. Rather than a mixed pseudopotential or a Heitler-London…
Quantum memories capable of storing and retrieving coherent information for extended times at room temperature would enable a host of new technologies. Electron and nuclear spin qubits using shallow neutral donors in semiconductors have…
The realization of a quantum computer represents a tremendous scientific and technological challenge due to the extreme fragility of quantum information. The physical support of information, namely the quantum bit or qubit, must at the same…
Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission…
As the deepest group V donor in Si, Bi has by far the largest hyperfine interaction, and also a large I=9/2 nuclear spin. At zero field this splits the donor ground state into states having total spin 5 and 4, which are fully resolved in…
Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the properties of individual dopants tens of nanometers below the…