Related papers: Performance of quantum-dot-based tunnel-injection …
Tunnel-injection lasers promise various advantages in comparison to conventional laser designs. In this paper, we present a theoretical analysis for the physics of the tunnel-injection process in quantum-dot based laser devices. We describe…
Tunneling-injection structures are incorporated in semiconductor lasers in order to overcome the fundamental dynamical limitation due to hot carrier injection by providing a carrier transport path from a cold carrier reservoir. The…
We experimentally investigate and analyze the electrical and optical characteristics of GaAs-based conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction. It was found that TJ LD show a…
The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems…
We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal…
In quantum-dot tunnel-injection lasers, the excited charge carriers are efficiently captured from the bulk states via an injector quantum well and then transferred into the quantum dots via a tunnel barrier. The alignment of the electronic…
Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy,…
Quantum cascade lasers are recognized as propitious candidates for future terahertz optoelectronics. Here we demonstrate several definite advantages of quantum dot cascade structures over quantum well devices, which suffer fundamental…
We report on a new design of terahertz quantum cascade laser based on a single, potential-inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on…
We formulate a model of a semiconductor Quantum Dot laser with injection of spin-polarized electrons. As compared to higher-dimensionality structures, the Quantum-Dot-based active region is known to improve laser properties, including the…
We report the unequivocal demonstration of mid-infrared mode-locked pulses from a semiconductor laser. The train of short pulses was generated by actively modulating the current and hence the optical gain in a small section of an…
Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers…
In this work we study a possibility of waveguide fabrication on the basis of active quantum wells in semiconductor lasers. The efficiency of such a waveguide for an InP structure with In0.53Ga0.47As quantum wells is demonstrated…
A relationship between the maximum operating temperature of semiconductor lasers and their emission wavelength is conjectured. The conjecture is supported by a wide variety of existing experimental data for visible and infrared double…
A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the Multiple Quantum Well Heterojunction Bipolar Transistor Laser in time-domain. Simulation results extracted…
We study theoretically the performance of electrically pumped self-organized quantum dots as a gain material in the mid-IR range at room temperature. We analyze an AlGaAs/InGaAs based structure composed of dots-in-a-well sandwiched between…
Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region necessary for ultraviolet emission, achieving efficient…
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…
Optical injection locking of the repetition frequency of a quantum cascade laser frequency comb is demonstrated using an intensity modulated near-infrared light at 1.55 $\mu$m illuminating the front facet of the laser. Compared to the…
The propagation of surface electromagnetic waves along a uniform magnetic field is studied in a quantum electron-hole semiconductor plasma. A new forward propagating mode, not reported before, is found by the effect of quantum tunneling,…