Potential-inserted quantum well design for quantum cascade terahertz lasers
Materials Science
2017-04-05 v2
Abstract
We report on a new design of terahertz quantum cascade laser based on a single, potential-inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on atomistic, spds* tight-binding calculations, and performances are compared to that of the classical three-well design. We obtain a 100% increase of the oscillator strength per unit length, while maintaining a high, nearly temperature-independent contrast between phonon-induced relaxation times of the upper and lower lasing states. The improved performances are expected to allow THz lasing at room temperature.
Keywords
Cite
@article{arxiv.1610.05721,
title = {Potential-inserted quantum well design for quantum cascade terahertz lasers},
author = {R. Benchamekh and J. -M. Jancu and P. Voisin},
journal= {arXiv preprint arXiv:1610.05721},
year = {2017}
}