Related papers: Performance of quantum-dot-based tunnel-injection …
Quantum key distribution (QKD) based on the laws of quantum physics allows the secure distribution of secret keys over an insecure channel. Unfortunately, imperfect implementations of QKD compromise its information-theoretical security.…
We report temperature-dependent current-voltage (I - V - T) and output light power-voltage or current (P - V - T) or (P - I - T) characteristics of 1550 nm tunneling injection quantum dot (TI QD) laser diodes. Experimental data is…
Narrow linewidth lasers are indispensable for coherent optical systems, including communications, metrology, and sensing. Although compact semiconductor lasers with narrow linewidths and low noise have been demonstrated, their spectral…
In a quantum Hall interferometer, the dependence of the signal on source-drain voltage is controlled by details of the edge physics, such as the velocities of edge modes and the interaction between them and with screening layers. Such…
Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject to a large bias voltage. In the ideal case in which interlayer tunneling is negligibly weak, the system is in…
The purpose of this research is to study laser dynamics of InAs/GaAs Quantum Dot Lasers (QDLs) by changing QD energy levels. To date, most of the investigations have focused on only one of these circumstances, and hardly the result of…
We show that mid infrared transmission spectroscopy of a quantum cascade laser provides clear cut information on changes in charge location at different bias. Theoretical simulations of the evolution of the gain/absorption spectrum for the…
We report on linewidth analysis of optical transitions in InAs/GaAs coupled quantum dots as a function of bias voltage, temperature, and tunnel coupling strength. A significant line broadening up to 100 $\mu$eV is observed at hole tunneling…
A controllable injection scheme is key to producing high quality laser-driven electron beams and X-rays. Self-injection is the most straightforward scheme leading to high current and peak energies, but is susceptible to variations in laser…
The influence of indium percentage on dynamical characteristics of InxGa1-xAs/GaAs(001) quantum dot lasers (QDLs) is investigated. Energy levels of self-organized truncated-cone-shape QDs are calculated by means of the eight-band k.p model,…
The generation of broadband squeezed states of light lies at the heart of high-speed continuous-variable quantum information. Traditionally, optical nonlinear interactions have been employed to produce quadrature-squeezed states. However,…
We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but…
A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer…
InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer…
We simulate the terahertz emission from laterally-biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre…
Two main mechanisms dictate the tunneling process in a double quantum dot: overlap of excited wave functions, effectively described as a tunneling rate, and phonon-assisted tunneling. In this paper, we study different regimes of tunneling…
We report on a waveguide engineering technique that enables the generation of a bandwidth up to 1 THz and record ultra-short pulse length of 2.5 ps in injection seeded terahertz quantum cascade lasers. The reported technique is able to…
A three-terminal spectroscopy that probes both subsurface energy barriers and interband optical transitions in a semiconductor heterostructure is demonstrated. A metal-base transistor with a unipolar p-type semiconductor collector embedding…
We analyze the interaction of a triple quantum dot molecules controlled by the tunneling coupling instead of coupling laser. A general analytic expression for the steady-state linear susceptibility for a probe-laser field is obtained and we…
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study…