Related papers: Electrically Protected Valley-Orbit Qubits in Sili…
Valley-orbit coupling is a key parameter for a silicon quantum dot in determining its suitability for applications in quantum information processing. In this paper we study the effect of interface steps on the magnitude and phase of…
Spin qubit shuttling via moving conveyor-mode quantum dots in Si/SiGe offers a promising route to scalable miniaturized quantum computing. Recent modeling of dephasing via valley degrees of freedom and well disorder dictate a slow shutting…
In Si/SiGe quantum dots, the decoherence behavior of spin qubits usually comes from the non-Markovian effect of the charge noise. To improve the performance of using the coherent noise models in the decoherence simulation and tomography…
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley…
We consider spin-lattice relaxation processes for electrons trapped in lateral Si quantum dots in a $[001]$ inversion layer. Such dots are characterized by strong confinement in the direction perpendicular to the surface and much weaker…
In this work, we examine microwave responses of the Pauli spin blockade (PSB) leakage current through a p-type silicon double quantum dot. We observe more than the expected two resonance lines with the main resonance line exhibits both…
Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-photon resonances are observed due to mixing of magnetic…
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5,400 is achieved by…
The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO$_2$/(100)Si/SiO$_2$ quantum well is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a…
We propose a scheme for coherent rotation of the valley isospin of a single electron confined in a carbon nanotube quantum dot. The scheme exploits the ubiquitous atomic disorder of the nanotube crystal lattice, which induces time-dependent…
An idea of employing the Landau-Zener-St\"uckelberg-Majorana (LZSM) dynamics to flip a spin of a single ground state hole is introduced and explored by a time-dependent simulation. This configuration interaction study considers a hole…
Sub-harmonics of electric dipole spin resonance (EDSR) mediated by Landau-Zener-St{\"u}ckelberg-Majorana (LZSM) tunneling transitions are studied numerically and analytically in a Zeeman-split four level system with strong spin-orbit…
A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface…
We derive an effective Hamiltonian which describes the dynamics of electrons in the conduction band of transition metal dichalcogenides (TMDC) in the presence of perpendicular electric and magnetic fields. We discuss in detail both the…
We investigate the singlet-triplet relaxation due to the spin-orbit coupling together with the electron-phonon scattering in two-electron multivalley silicon single quantum dots, using the exact diagonalization method and the Fermi golden…
The unavoidable effect of the environmental noise due to nuclear spins and charge traps is included in the study of the hybrid qubit dynamics. Hybrid qubit dues its name to the advantageous combination of manipulation speed of a charge…
Electrons' multiple quantum degrees of freedom can lead to rich physics, including a competition between various exotic ground states, as well as novel applications such as spintronics and valleytronics. Here we report magneto-transport…
A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing…
We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a…
The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for…