Related papers: Electrically Protected Valley-Orbit Qubits in Sili…
The pseudospin of heavy-holes (HHs) confined in a semiconductor quantum dot (QD) represents a promising candidate for a fast and robust qubit. While hole spin manipulation by a classical electric field utilizing the Dresselhaus spin-orbit…
We use an empirical tight-binding approach to calculate electron and hole states in [111]-grown PbSe nanowires. We show that the valley-orbit and spin-orbit splittings are very sensitive to the atomic arrangement within the nanowire…
Half-metals have fully spin polarized charge carriers at the Fermi surface. Such polarization usually occurs due to strong electron--electron correlations. Recently [Phys. Rev. Lett. {\bf{119}}, 107601 (2017)], we have demonstrated…
We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on…
Arrays of semiconductor quantum dots provide a powerful platform to design correlated quantum matter from the bottom up. We establish a predictive framework for engineering local electron pairing in these artificial molecules by…
We find that the motion of the valley electrons -- electronic states close to the ${\rm K}$ and ${\rm K'}$ points of the Brillouin zone -- is confined into two dimension when the layers of MoS$_{2}$ follow the 3R stacking, while in the 2H…
In a number of widely-studied materials, such as Si, AlAs, Bi, graphene, MoS2, and many transition metal dichalcogenide monolayers, electrons acquire an additional, spin-like degree of freedom at the degenerate conduction band minima, also…
We study the two-electron eigenspectrum of a carbon-nanotube double quantum dot with spin-orbit coupling. Exact calculation are combined with a simple model to provide an intuitive and accurate description of single-particle and interaction…
The interference between repeated Landau-Zener transitions in a qubit swept through an avoided level crossing results in Stueckelberg oscillations in qubit magnetization. The resulting oscillatory patterns are a hallmark of the coherent…
Half-metallicity (full spin polarization of the Fermi surface) usually occurs in strongly correlated electron systems. We demonstrate that doping a spin-density wave insulator in the weak-coupling regime may also stabilize half-metallic…
Landau-Zener-St\"uckelberg-Majorana (LZSM) interference emerges when the parameters of a $\textit{qubit}$ are periodically modulated across an avoided level crossing. Here, we investigate the occurrence of the LZSM phenomenon in nonlinear…
Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qubits in silicon. Here, we investigate a counterintuitive…
For two-dimensional single-valley quadratic band crossing systems with weak repulsive electron-electron interactions, we show that upon introducing a chemical potential, particle-hole order is suppressed and superconductivity becomes the…
Spin and valley-orbit splittings are calculated in SiGe/Si/SiGe quantum wells (QWs) by using the tight-binding approach. In accordance with the symmetry considerations an existence of spin splitting of electronic states in perfect QWs with…
The complexity of electronic band structures in quantum materials offers new charge-neutral degrees of freedom stable for transport, a promising example being the valley (axial) degree of freedom in Weyl semimetals (WSMs). A noninvasive…
We demonstrate storage and manipulation of one qubit encoded into a decoherence-free subspace (DFS) of two nuclear spins using liquid state nuclear magnetic resonance (NMR) techniques. The DFS is spanned by states that are unaffected by…
We demonstrate quantum coherent control of a single electron spin in a NV center in diamond using the Landau-Zener-Stuckelberg interferometry at room temperature. Interference pattern is observed oscillating as a function of microwave…
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability…
Conventional quantum transport methods can provide quantitative information on spin, orbital, and valley states in quantum dots, but often lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial…
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…