Related papers: Electrically Protected Valley-Orbit Qubits in Sili…
In monolayer group-VI transition metal dichalcogenides (TMDC), charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with…
While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of…
The rise of graphene opens a new door to qubit implementation, as discussed in the recent proposal of valley pair qubits in double quantum dots of gapped graphene (Wu et al., arXiv: 1104.0443 [cond-mat.mes-hall]). The work here presents the…
Valley splitting in strained Si/SiGe quantum wells is a central parameter for silicon spin qubits and is commonly described with envelope-function and effective-mass theories. These models provide a computationally efficient continuum…
The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still…
Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…
We investigate the spin-valley physics (SVP) in MoSe$_2$/WSe$_2$ heterobilayers under external electric field (EF) and changes of the interlayer distance (ID). We analyze the spin ($S_z$) and orbital ($L_z$) degrees of freedom, and the…
We study an accumulation mode Si/SiGe double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to…
Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; however, long shuttling trajectories are guaranteed to encounter…
We systematically investigate Landau-Zener-St\"uckelberg-Majorana (LZSM) interference under chiral-mirror-like symmetry and propose its application to non-adiabatic topological transport of edge states. Protected by this symmetry, complete…
The performance and scalability of silicon spin qubits depend directly on the value of the conduction band valley splitting. In this work, we investigate the influence of electromagnetic fields and the interface width on the valley…
Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons…
We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron…
Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could…
The presence of non-degenerate valley states in silicon can drastically affect electron dynamics in silicon-based heterostructures, leading to electron spin relaxation and spin-valley coupling. In the context of solid-state spin qubits, it…
Controlling quantum interference near avoided energy-level crossings is crucial for fast and reliable coherent manipulation in quantum information processing. However, achieving tunable quantum interference in atomically-precise engineered…
We study three-electron energy spectra in Si/SiGe single and vertically coupled double quantum dots where all the relevant effects, such as, the Zeeman splitting, spin-orbit coupling, valley coupling and electron-electron Coulomb…
This study employs advanced phase-field modeling to investigate Si-based qubit MOSFETs, integrating electrostatics and quantum mechanical effects. We adopt a comprehensive modeling approach, utilizing full-wave treatment of the Schrodinger…
Undoped Si-SiGe two-dimensional electron gas (2DEG) provide an ideal platform for hosting quantum-dot spin-qubits owing enhanced spin dephasing times and compatibility with standard CMOS technology. The strained Si quantum well reduces the…
As an emerging magnetic phase, altermagnets (AMs) with collinear compensated magnetism in real space and alternating spin splitting in the band structure have attracted widespread attention. Here, based on first-principles calculations, we…