Related papers: Stress modulated optical spin-injection in bulk se…
Current-induced spin polarization (CISP) is rederived in ballistic spin-orbit-coupled electron systems, based on equilibrium statistical mechanics. A simple and useful picture is correspondingly proposed to help understand the CISP and…
Semiconductor spin lasers are distinguished from their conventional counterparts by the presence of spin-polarized carriers. The transfer of angular momentum of the spin-polarized carriers to photons provides important opportunities for the…
Using a perturbative model for diffractive interactions, we derive an expression for the polarized diffractive structure function $g_1^D$ in the high energy limit. This structure function is given by the interference of diffractive…
We report theoretical and experimental studies of ambipolar spin diffusion in a semiconductor. A circularly polarized laser pulse is used to excite spin-polarized carriers in a GaAs multiple quantum well sample at 80 K. Diffusion of…
Semiconductor spintronics will need to control spin injection phenomena in the non-linear regime. In order to study these effects we have performed spin injection measurements from a dilute magnetic semiconductor [(Zn,Be,Mn)Se] into…
Methods to generate spin-polarised electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global…
Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field…
We observe the noise spectrum of electron spins in bulk GaAs by Faraday rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron spin dynamics in semiconductors. We measure exemplarily the…
We report on the detection of the intrinsic spin Hall effect in a modulation doped Al-GaAs/GaAs/AlGaAs heterostructure bounded by a self-aligned pn-junction, fabricated by the cleaved edge overgrowth method. Light emission due to the…
We have investigated the electronic structure and magnetic properties of GdN as a function of unit cell volume. Based on the first-principles calculations of GdN, we observe that there is a transformation in conduction properties associated…
Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(\Omega cm)^{-1}]$, showing the possibility of spin Hall effect…
By means of time-resolved optical orientation under strong optical pumping, the k-dependence of the electron spin-flip time (t_sf) in undoped GaAs is experimentally determined. t_sf monotonically decreases by more than one order of…
A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by…
We have studied polariton spin dynamics in a GaAs/AlGaAs microcavity by means of polarization- and time-resolved photoluminescence spectroscopy as a function of excitation density and normal mode splitting. The experiments reveal a novel…
We demonstrate theoretically that the spin polarization of current can be electrically amplified within nonmagnetic semiconductors by exploiting the fact the spin current, compared to the charge current, is weakly perturbed by electric…
The bulk viscosity in spin-one color-superconducting strange quark matter is calculated by taking into account the interplay between the nonleptonic and semi-leptonic week processes. In agreement with previous studies, it is found that the…
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk…
Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin…
The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the…
We study the effect of dipolar interactions on the level of squeezing in spin-1 Bose-Einstein condensates by using the single mode approximation. We limit our consideration to the $\mathfrak{su}(2)$ Lie subalgebra spanned by spin operators.…