Related papers: Stress modulated optical spin-injection in bulk se…
The spin polarization of electrons trapped in InAs self-assembled quantum dot ensembles is investigated. A statistical approach for the population of the spin levels allows one to infer the spin polarization from the measure values of the…
We establish a general formalism of the bulk spin polarization (BSP) and the current-based spin polarization (CSP) for mesoscopic ferromagnetic and spin-orbit interaction (SOI) semiconducting systems. Based on this formalism, we reveal the…
Understanding and manipulating spin polarization and transport in the vicinity of semiconductor-hosted defects is a problem of present technological and fundamental importance. Here, we use high-field magnetic resonance to monitor the…
A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature ($40<T_L<300$ K) and doping density…
We attract attention to the fact that the ultimate (shot-noise-limited) polarimetric sensitivity can be enhanced by orders of magnitude leaving the photon flux incident onto the photodetector on the same low level. This opportunity is of…
The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the…
Selective and large polarization of current injected into semiconductor (SC) is predicted in Ferromagnet (FM)/Quantum Dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is…
Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing…
A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum…
Single crystalline FeSi samples with a conducting surface state (CSS) were studied under high pressure ($\textit{P}$) and magnetic field ($\textit{B}$) by means of electrical resistance ($\textit{R}$) measurements to explore how the bulk…
Theory of spin noise in low dimensional systems and bulk semiconductors is reviewed. Spin noise is usually detected by optical means, continuously measuring the rotation angle of the polarization plane of the probe beam passing through the…
We calculate the plasmon frequency and damping rate of plasma oscillations in a spin-polarized BLG system. Using the long wavelength approximation for dynamical dielectric function, we obtain an analytical expression for plasmon frequency…
One of the most fundamental and exotic properties of 3D topological insulators (TIs) is spin-momentum-locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other…
We present a complete description of spin injection and detection in Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three…
In an inhomogeneously doped magnetic semiconductor, an interplay between an equilibrium magnetization and injected nonequilibrium spin leads to the spin-voltaic effect--a spin analogue of the photo-voltaic effect. By reversing either the…
Nuclear magnetic resonance (NMR) and transport measurements have been performed at high magnetic fields and low temperatures in a series of $n$-type Bi$_{2}$Se$_{3}$ crystals. In low density samples, a complete spin polarization of the…
Pauli spin blockade (PSB) in double quantum dots (DQDs) has matured into a prime technique for precise measurements of nanoscale system parameters. In this work we demonstrate that systems with site-dependent g-tensors and spin-polarized…
Layered 2D van der Waals materials, such as transition metal dichalcogenides, are promising for nanoscale spintronic and optoelectronic applications. Harnessing their full potential requires understanding both intrinsic transport and the…
A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 {\Omega}, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room…
Finding stimuli capable of driving an imbalance of spin-polarised electrons within a solid is the central challenge in the development of spintronic devices. However, without the aid of magnetism, routes towards this goal are highly…