Related papers: Stress modulated optical spin-injection in bulk se…
We have investigated spatio-temporal kinetics of electron spin polarization in semiconductor narrow 2D strip and explored the ability to manipulate spin relaxation. Information about spin of the conduction electrons and mechanisms of spin…
We studied the effect of external pressure on the optical response of the nodal-line semimetal candidate ZrSiTe by reflectivity measurements. At pressures of a few GPa, the reflectivity, optical conductivity, and loss function are strongly…
The spin dynamics of localized electrons in bulk semiconductors is governed by the interplay of effective nuclear field fluctuations, spin exchange between electrons, and spin transitions into the conduction band. Using spin noise…
Periodic excitation of electron spin polarization by consecutive laser pulses in phase with Larmor spin precession about a magnetic field results in resonant spin amplification (RSA). We observe a drastic modification of RSA in $n$-doped…
Electronic structures of FeSi and Fe$_{1.02}$Si$_{0.98}$ under pressure (achieved through volume compression) have been investigated by using DFT+DMFT and KKR-CPA methods, respectively. The widening of band-gap with increasing pressure…
The equations-of-motion for the density matrix are derived in a multiband model to describe the response of semiconductors (bulk or quantum well structures) under optical excitation with arbitrary polarization. The multiband model used,…
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…
It was proposed recently by Murakami et al. [Science \textbf{301}, 1348(2003)] that in a large class of $p$-doped semiconductors, an applied electric field can drive a quantum dissipationless spin current in the direction perpendicular to…
In a thin strip of a two-dimensional semiconductor electronic system, spin-orbit coupling may be induced near both edges of the strip due to the substantial spatial variation of the confining potential in the boundary regions. In this paper…
The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark…
Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field…
We investigate the two-dimensional (2D) highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X = I, Br, and Cl) by angular-resolved photoemission spectroscopy. Due to…
In this paper, current-induced spin polarization for two-dimensional electron gas with a general spin-orbit interaction is investigated. For isotropic energy spectrum, the in-plane current-induced spin polarization is found to be dependent…
Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly…
We investigated the effect due to perpendicular magnetic field on quantum wires where spin-orbit interaction (SOI) of electrons is not neglected. Based on the calculated energy dispersion, the nonlinear ballistic conductance ($G$) and…
A novel spin orientation mechanism - dynamic electron spin polarization has been recently suggested in Phys. Rev. Lett. $\mathbf{125}$, 156801 (2020). It takes place for unpolarized optical excitation in weak magnetic fields of the order of…
Spin noise sets fundamental limits to the precision of measurements using spin-polarized atomic vapors, such as performed with sensitive atomic magnetometers. Spin squeezing offers the possibility to extend the measurement precision beyond…
A remarkably strong dependence of magnetoimpedance (MI) on tensile stress has been observed in the microwave frequency range for thin CoMnSiB glass-coated microwires exposed to a special thermal treatment. The MI ratio runs into more than…
We explore electrically injected, spin polarized transport in a ballistic two-dimensional electron gas. We augment the Buettiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode…
The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent…