Related papers: Highly thermally stable sub-20nm magnetic random-a…
Large magnetic entropy change (deltaSM) can realize a prominent heat transformation under the magnetic field and directly strengthen the efficacy of the magnetocaloric effect, which provides a pioneering environmentally friendly solid-state…
To address thermal stability issues for spintronic devices with a reduced size, we investigate spin-orbit torque in Co/Pt multilayers with strong perpendicular magnetic anisotropy. Note that the spin-orbit torque arises from the global…
The temperature dependence of magnetic anisotropy in (113)A (Ga,Mn)As layers grown by molecular beam epitaxy is studied by means of superconducting quantum interference device (SQUID) magnetometry as well as by ferromagnetic resonance (FMR)…
Here, we describe the prototype for precisely scaled temperature assisted magnetic recording scheme utilizing the characteristics of thermo-remnant magnetization (TRM) in bulk SmCrO$_3$ as a memory media. The TRM response can be exploited…
Shape Memory Alloys (SMAs) are a unique class of intermetallic alloys that can cyclically sustain large deformations and recover a designed geometry through a solid-to-solid phase transformation. SMAs provide favorable actuation energy…
The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in…
Perpendicular magnetic anisotropy (PMA) and dynamic magnetization reversal process in [CoFeB $t$ nm/Pd 1.0 nm]$_n$ ($t$ = 0.4, 0.6, 0.8, 1.0, and 1.2 nm; $n$ = 2 - 20) multilayer films have been studied by means of magnetic hysteresis and…
Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain causing perpendicular magnetic anisotropy in the layer. The…
Heat-assisted magnetic recording (HAMR) is a recent advancement in magnetic recording, allowing to significantly increase the areal density capability (ADC) of hard disk drives (HDDs) compared to the perpendicular magnetic recording (PMR)…
Analog crossbar arrays consisting of emerging memory devices can greatly alleviate the computational strain required by vector matrix multiplications for neural network applications. The ability to produce spin orbit torque-magnetic…
Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the…
Magnetic anisotropy is a fundamental property of magnetic materials that determines the alignment of the spins along the preferential direction, called the easy axis of magnetization. Magnetic polycrystalline thin films offer several…
[Co/Ni] multilayers with perpendicular magnetic anisotropy (PMA) have been researched and applied in various spintronic applications. Typically the seed layer material is studied to provide the desired face-centered cubic (\textit{fcc})…
Heavy metal/ferromagnetic layers with perpendicular magnetic anisotropy (PMA) have potential applications for high-density information storage in racetrack memories and nonvolatile magnetic random access memories. Writing and erasing of…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth…
As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research attention due to several features such as high density, zero…
Thermal stability factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with…
Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in (Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and reflects the dependence of the tunneling density of states in a ferromagnetic layer on…
Switching magnetization in a perpendicular magnetic tunnel junction (pMTJ) via voltage controlled magnetic anisotropy (VCMA) has shown the potential to markedly reduce the switching energy. However, the requirement of an external magnetic…