Related papers: Highly thermally stable sub-20nm magnetic random-a…
The conditions of field and voltage for inducing steady state excitations in fully perpendicular magnetic tunnel junctions (pMTJs), adapted for memory applications, were numerically investigated by the resolution of the…
We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA)…
We report the fabrication of perpendicular ferromagnetic electrodes for tunneling devices consist of van der Waals heterostructure. We found MgO/Co/Pt films on Hexagonal BN shows perpendicular magnetic anisotropy (PMA) with the easy axis…
Flexible magnetic materials with robust and controllable perpendicular magnetic anisotropy (PMA) are highly desirable for developing flexible high-performance spintronic devices. However, it is still challenge to fabricate PMA films through…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
We predict a huge anisotropic thermal magnetoresistance (ATMR) in the near-field radiative heat transfer between magneto-optical particles when the direction of an external magnetic field is changed with respect to the heat current…
Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…
We have investigated the effects of post growth low temperature annealing on the magnetic, electrical and structural properties of (Ga_0.94,Mn_0.06)(As_0.9,P_0.1) layers grown by molecular beam epitaxy. By controlling the annealing time we…
The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter,…
Large perpendicular magnetic anisotropy (PMA) in transition metal thin films provides a pathway for enabling the intriguing physics of nanomagnetism and developing broad spintronics applications. After decades of searches for promising…
We report on the perpendicular magnetic anisotropy (PMA) behavior of heavy metal (HM)/ Fe alloy/MgO thin film heterostructures after an ultrathin HfO2 passivation layer is inserted between the Fe alloy and the MgO. This is accomplished by…
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…
The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions…
In this study, we achieved the improvement of uniaxial perpendicular magnetic anisotropy (PMA) in the W/MgAl2O4/CoFeMnSi/W/CoFeMnSi/MgAl2O4/W heterostructure by manipulating the annealing temperature (TA) [350 C, 450 C, and 550 C]. We…
As a prototypical half-metallic ferromagnet, La0.67Sr0.33MnO3 (LSMO) has been extensively studied due to its versatile physical properties and great potential in spintronic applications. However, the weak perpendicular magnetic anisotropy…
Perpendicular magnetic anisotropy (PMA) in ultrathin magnetic structures is a key ingredient for the development of electrically controlled spintronic devices. Due to their relatively large spin-polarization, high Curie temperature and low…
Ferromagnetic films with perpendicular magnetic anisotropy are of interest in spintronics and superconducting spintronics. Perpendicular magnetic anisotropy can be achieved in thin ferromagnetic multilayer structures, when the anisotropy is…
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes…
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…
A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable…