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Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF,…

Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and precise vertex reconstruction are essential. As part of the ALICE…

DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full…

Detector developments are currently enabling new capabilities in the field of transmission electron microscopy (TEM). We have investigated the limits of a hybrid pixel detector, Medipix3, to record dynamic, time varying, electron signals.…

AstroPix is a novel monolithic high-voltage CMOS active pixel sensor proposed for next generation medium-energy gamma-ray observatories like the All-sky Medium Energy Gamma-ray Observatory eXplorer (AMEGO-X). For AMEGO-X AstroPix must…

We present a novel single-photon detector based on a vacuum tube incorporating a photocathode, a microchannel plate (MCP), and a Timepix4 CMOS ASIC functioning as a pixelated anode. Designed to handle photon rates up to 1 billion per second…

Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…

The upcoming Mu3e experiment will search for the charged lepton flavour violating decay of a muon at rest into three electrons. The maximal energy of the electrons is 53 MeV, hence a low material budget is a key performance requirement for…

A new type of gaseous micropattern particle detector based on a closed-cell microcavity plasma panel sensor is reported. The first device was fabricated with 1 x 1 x 2 mm cells. It has shown very clean signals of 0.6 to 2.5 volt amplitude,…

A next-generation medium-energy gamma-ray telescope targeting the MeV range would address open questions in astrophysics regarding how extreme conditions accelerate cosmic-ray particles, produce relativistic jet outflows, and more. One…

Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the…

The development of CMOS pixel sensors with column parallel read-out and integrated zero-suppression has resulted in a full size, nearly 1 Megapixel, prototype with ~100 \mu s read-out time. Its performances are quite close to the ILD vertex…

The CERN RD50 collaboration develops depleted monolithic active pixel CMOS sensors for future colliders with the aim of high radiation tolerance, good time resolution, and high granularity pixel detectors. The most recent prototype, the…

Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting…

The Medipix4 chip is the latest member in the Medipix/Timepix family of hybrid pixel detector chips aimed at high-rate spectroscopic X-ray imaging using high-Z materials. It can be tiled on all 4 sides making it ideal for constructing…

The planned luminosity increase at the Large Hadron Collider in the coming years has triggered interest in the use of the particles' time of arrival as additional information in specialized detectors to mitigate the impact of pile-up. The…

Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected…

A fast simulation method is presented for a depleted monolithic active pixel sensor, which uses a data driven parameterization of the charge collection and propagation. This approach provides an efficient alternative to TCAD simulations,…

Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when…

This paper describes the performance of a prototype timing detector, based on 50 micrometer thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the…