Related papers: Field effect enhancement in buffered quantum nanow…
In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of nanowire samples for electron holography and combine potential…
We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the…
The ability to generate quantum light at room temperature on a mature semiconductor platform opens up new possibilities for quantum technologies. Heteroepitaxial growth of gallium nitride on silicon substrates offers the opportunity to…
Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emission/absorption. However, the surface curvature makes the…
Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can emerge when a semiconductor nanowire with strong spin-orbit…
We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces (cleaved-edge…
We studied the effect of the V/III flux ratio and substrate temperature on magnetotransport properties and lattice parameters of Ga0.96Mn0.04As grown by molecular beam epitaxy. For all the substrate temperatures, the conductivities and…
We evidence the influence of surface effects for InAs quantum dots embedded into GaAs photonic nanowires used as efficient single photon sources. We observe a continuous temporal drift of the emission energy that is an obstacle to resonant…
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium…
The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in…
This work presents the electronic and transport properties of bilayer borophene nanoribbons. In the first part, a four-orbital tight-binding model is derived by fitting the \emph{ab initio} band structure. The transport properties of…
Two-dimensional (2D) materials have been proposed, among many other applications, as a efficient tool for the separation of atomic and molecular species and their corresponding isotopes, given the confinement provided by their subnanometric…
Rapid progress of quantum transport study in topological Dirac semimetal, including observations of quantum Hall effect in two-dimensional (2D) Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ samples, has uncovered even more interesting quantum…
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with…
InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budget limitation imposed by Back-End-Of-Line processing.…
Employing state-of-the-art molecular beam epitaxy techniques to grow thin, modulation-doped AlAs quantum wells, we have achieved a low temperature mobility of 5.5 m$^2$/Vs with out-of-plane occupation, an order of magnitude improvement over…
III-V semiconductor nanowires are considered promising building blocks for advanced photonic devices. One of the key advantages is that the lattice mismatch can easily be accommodated in 1D structures, resulting in superior heteroepitaxial…
Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowires ensembles were measured.…
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such…
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth is…