Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography

Martien Den Hertog; Rudeesun Songmuang; Eva Monroy

doi:10.1088/1742-6596/471/1/012019

Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography

Materials Science 2014-04-11 v1

Authors: Martien Den Hertog , Rudeesun Songmuang , Eva Monroy

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Abstract

In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of nanowire samples for electron holography and combine potential profiles obtained using holography with theoretical calculations of the projected potential in order to gain understanding of the potential distribution in these nanostructures. The effects of surface states are discussed

Keywords

GaN/AlN nanowire heterostructures off-axis holography polarization fields molecular-beam epitaxy potential distribution surface states

Cite

@article{arxiv.1404.2823,
  title  = {Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography},
  author = {Martien Den Hertog and Rudeesun Songmuang and Eva Monroy},
  journal= {arXiv preprint arXiv:1404.2823},
  year   = {2014}
}

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