English

Polarity determination in ZnSe nanowires by HAADF STEM

Materials Science 2012-07-23 v1

Abstract

High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The experimental results are compared to simulated images in order to verify possible experimental artefacts. In this work we show that for this type of nano-objects, a residual tilt of the specimen below 15 mrad, away from the crystallographic zone axis does not impair the interpretation of the experimental images.

Keywords

Cite

@article{arxiv.1207.5024,
  title  = {Polarity determination in ZnSe nanowires by HAADF STEM},
  author = {Martien Den Hertog and Miryam Elouneg-Jamroz and Edith Bellet-Amalric and Samir Bounouar and Catherine Bougerol and Régis André and Yann Genuist and Jean Philippe Poizat and Kuntheak Kheng and Serge Tatarenko},
  journal= {arXiv preprint arXiv:1207.5024},
  year   = {2012}
}