Related papers: Pure spin current transport in a SiGe alloy
We compute the spectrum of pure spin current injection in ferroelectric single-layer SnS, SnSe, GeS, and GeSe. The formalism takes into account the coherent spin dynamics of optically excited conduction states split in energy by spin orbit…
We investigate spin and charge transport in both single and bilayer graphene non-local spin-valve devices. Similar to previous studies on bilayer graphene, we observe an inverse dependence of the spin lifetime on the carrier mobility in our…
While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of…
Efficient detection of spin-charge conversion is crucial for advancing our understanding of emergent phenomena in spin-orbit-coupled nanostructures. Here, we provide proof of principle of an electrical detection scheme of spin-charge…
Spin currents can be generated through various mechanisms, including the piezospintronic effect, which arises when strain or lattice distortions induce a change in the dipolar spin moment, causing a pure spin current without necessarily…
Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plagues spin injection in semiconductors with ferromagnetic ohmic contacts. Through the spin-dependent mean-free-path, it…
Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for…
We have developed and applied a mobility edge model that takes into account drift and diffusion currents to characterize the space charge limited current in organic semiconductors. The numerical solution of the drift-diffusion equation…
Pure spin current is a powerful tool for manipulating spintronic devices, and its dynamical behavior is an important issue. By using mesoscopic transport theory for electron tunneling induced by spin accumulation, we investigate the…
We demonstrate the injection and detection of electrically and thermally generated spin currents probed in Co$_2$MnSi/Cu lateral spin valves. Devices with different electrode separations are patterned to measure the non-local signal as a…
We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGa electrodes with perpendicular magnetization. Its current-voltage characteristics show nonlinear…
We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin…
We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…
The spin-polarized surface states in topological insulators offer unique transport characteristics that make them distinguishable from trivial conductors. Here, we detect the impact of these surface states in the topological insulator…
In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which…
A one dimensional theory of lateral spin-polarized transport is derived from the two dimensional flow in the vertical cross section of a stack of ferromagnetic and paramagnetic layers. This takes into account the influence of the lead on…
The interface between a ferro-/ferrimagnetic insulator and a normal metal can support spin currents polarized collinear with and perpendicular to the magnetization direction. The flow of angular momentum perpendicular to the magnetization…
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant…
Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the…
We grow $^{28}$Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500…